Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 500nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 46GHz |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Collector - Emitter Voltage VCEO | 4.1V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4 |
| Mfr. Part # | BFP650FH6327 |
| Package | TSFP-4 |
| Model Number | BFP650FH6327 |
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Product Specification
| Current - Collector Cutoff | 500nA | Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 46GHz | type | NPN |
| Current - Collector(Ic) | 50mA | Collector - Emitter Voltage VCEO | 4.1V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4 |
| Mfr. Part # | BFP650FH6327 | Package | TSFP-4 |
| Model Number | BFP650FH6327 |
The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.
| Parameter | Value | Conditions | Unit |
| Maximum Ratings | |||
| Collector-Emitter Voltage | 20 | V | |
| Collector-Base Voltage | 20 | V | |
| Emitter-Base Voltage | 5 | V | |
| Collector Current | 100 | mA | |
| Total Power Dissipation | 1.2 | Tamb = 25C | W |
| Storage Temperature | -65 to 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance Junction to Ambient | 104 | (calculated) | K/W |
| Thermal Resistance Junction to Case | 40 | (calculated) | K/W |
| Electrical Characteristics (Typical, unless otherwise specified) | |||
| Collector-Emitter Breakdown Voltage | 20 | IC = 1 mA, IB = 0 | V |
| Collector-Emitter Breakdown Voltage | 20 | IB = 10 A, IE = 0 | V |
| Emitter-Base Breakdown Voltage | 5 | IE = 1 mA, IC = 0 | V |
| Collector Cut-off Current | 0.01 | VCE = 20 V, VBE = 0 | A |
| Emitter Cut-off Current | 0.01 | VEB = 5 V, VCE = 0 | A |
| DC Current Gain (hFE) | 100 | VCE = 3 V, IC = 30 mA | |
| Transition Frequency (fT) | 65 | VCE = 3 V, IC = 30 mA, f = 1 GHz | GHz |
| Collector-Base Capacitance (CCB) | 0.6 | VCB = 10 V, f = 1 MHz | pF |
| Noise Figure (NFmin) | 0.6 | VCE = 3 V, IC = 6 mA, f = 1 GHz | dB |
| Noise Figure (NFmin) | 1.0 | VCE = 3 V, IC = 30 mA, f = 1 GHz | dB |
| Noise Figure (NF50) | 1.0 | VCE = 3 V, IC = 6 mA, f = 1 GHz, ZS = 50 | dB |
| Noise Figure (NF50) | 1.5 | VCE = 3 V, IC = 30 mA, f = 1 GHz, ZS = 50 | dB |
| 3rd Order Intercept Point (OIP3) | 38 | ZS = ZL = 50 , VCE = 3 V, IC = 30 mA, f = 1 GHz | dBm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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