| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 360mW |
| DC Current Gain | 4000 |
| Transition frequency(fT) | 170MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | 360mW 4000 NPN 500mA 30V SOT-23 Single Bipolar Transistors RoHS |
| Mfr. Part # | BCV 27 E6327 |
| Package | SOT-23 |
| Model Number | BCV 27 E6327 |
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Product Specification
| Current - Collector Cutoff | 100nA | Pd - Power Dissipation | 360mW |
| DC Current Gain | 4000 | Transition frequency(fT) | 170MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 30V | Operating Temperature | - |
| Description | 360mW 4000 NPN 500mA 30V SOT-23 Single Bipolar Transistors RoHS | Mfr. Part # | BCV 27 E6327 |
| Package | SOT-23 | Model Number | BCV 27 E6327 |
The BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and have complementary PNP types (BCV26, BCV46).
| Parameter | Symbol | BCV27 | BCV47 | Unit |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 30 | 60 | V |
| Collector-base voltage | VCBO | 40 | 80 | V |
| Emitter-base voltage | VEBO | 10 | V | |
| Collector current | IC | 500 | mA | |
| Peak collector current, tp 10 ms | ICM | 800 | mA | |
| Base current | IB | 100 | mA | |
| Peak base current | IBM | 200 | mA | |
| Total power dissipation- TS 74 C | Ptot | 360 | mW | |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 210 | K/W | |
| DC Characteristics at TA = 25C, unless otherwise specified | ||||
| Collector-emitter breakdown voltage, IC = 10 mA, IB = 0 | V(BR)CEO | 30 | 60 | V |
| Collector-base breakdown voltage, IC = 100 A, IE = 0 | V(BR)CBO | 40 | 80 | V |
| Emitter-base breakdown voltage, IE = 10 A, IC = 0 | V(BR)EBO | 10 | V | |
| Collector-base cutoff current, VCB = 30 V, IE = 0 | ICBO | 0.1 | A | |
| Collector-base cutoff current, VCB = 60 V, IE = 0 | ICBO | 0.1 | A | |
| Collector-base cutoff current, VCB = 30 V, IE = 0, TA = 150 C | ICBO | 10 | A | |
| Collector-base cutoff current, VCB = 60 V, IE = 0, TA = 150 C | ICBO | 10 | A | |
| Emitter-base cutoff current, VEB = 4 V, IC = 0 | IEBO | 100 | nA | |
| DC current gain, IC = 100 A, VCE = 1 V | hFE | 4000 | 2000 | - |
| DC current gain, IC = 10 mA, VCE = 5 V | hFE | 10000 | 4000 | - |
| DC current gain, IC = 100 mA, VCE = 5 V | hFE | 20000 | 10000 | - |
| DC current gain, IC = 0.5 A, VCE = 5 V | hFE | 4000 | 2000 | - |
| Collector-emitter saturation voltage, IC = 100 mA, IB = 0.1 mA | VCEsat | 1 | V | |
| Base emitter saturation voltage, IC = 100 mA, IB = 0.1 mA | VBEsat | 1.5 | V | |
| AC Characteristics at TA = 25C, unless otherwise specified | ||||
| Transition frequency, IC = 50 mA, VCE = 5 V, f = 100 MHz | fT | 170 | MHz | |
| Collector-base capacitance, VCB = 10 V, f = 1 MHz | Ccb | 3 | pF | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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