Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.5V |
| Current - Collector Cutoff | 30nA |
| Pd - Power Dissipation | 150mW |
| Transition frequency(fT) | 25GHz |
| type | NPN |
| Current - Collector(Ic) | 40mA |
| Collector - Emitter Voltage VCEO | 5V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 5V 40mA 25GHz 150mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP410H6327 |
| Package | SOT-343-4 |
| Model Number | BFP410H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.5V | Current - Collector Cutoff | 30nA |
| Pd - Power Dissipation | 150mW | Transition frequency(fT) | 25GHz |
| type | NPN | Current - Collector(Ic) | 40mA |
| Collector - Emitter Voltage VCEO | 5V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 5V 40mA 25GHz 150mW Surface Mount SOT-343-4 | Mfr. Part # | BFP410H6327 |
| Package | SOT-343-4 | Model Number | BFP410H6327 |
The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with care as it is an ESD-sensitive device.
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 4.5 | V | TA = 25 C |
| Collector-emitter voltage | VCEO | 4.1 | V | TA = -55 C |
| Collector-emitter voltage | VCES | 13 | V | |
| Collector-base voltage | VCBO | 13 | V | |
| Emitter-base voltage | VEBO | 1.5 | V | |
| Collector current | IC | 40 | mA | |
| Base current | IB | 6 | mA | |
| Total power dissipation | Ptot | 150 | mW | TS 100 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Junction - soldering point thermal resistance | RthJS | 335 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CEO | 4.5 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 1 | nA | VCE = 2 V, VBE = 0 |
| Collector-emitter cutoff current | ICES | 30 | nA | VCE = 5 V, VBE = 0 , TA = 85 C |
| Collector-base cutoff current | ICBO | 1 | nA | VCB = 2 V, IE = 0 |
| Collector-base cutoff current | ICBO | 30 | nA | VCB = 2 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 0.001 | A | VEB = 0.5 V, IC = 0 |
| Emitter-base cutoff current | IEBO | 0.6 | A | VEB = 0.5 V, IC = 0 |
| DC current gain | hFE | 60 | - | IC = 13 mA, VCE = 2 V, pulse measured |
| DC current gain | hFE | 95 | - | IC = 13 mA, VCE = 2 V, pulse measured |
| DC current gain | hFE | 130 | - | IC = 13 mA, VCE = 2 V, pulse measured |
| Transition frequency | fT | 18 | GHz | IC = 20 mA, VCE = 2 V, f = 2 GHz |
| Transition frequency | fT | 25 | GHz | IC = 20 mA, VCE = 2 V, f = 2 GHz |
| Collector-base capacitance | Ccb | 0.09 | pF | VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector-base capacitance | Ccb | 0.17 | pF | VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Collector emitter capacitance | Cce | 0.35 | pF | VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded |
| Emitter-base capacitance | Ceb | 0.45 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
| Minimum noise figure | NFmin | 1.2 | dB | IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt |
| Power gain, maximum stable | Gms | 21.5 | dB | IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz |
| Insertion power gain | |S21| | 18.5 | dB | VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50 |
| Third order intercept point at output | IP3 | 23.5 | dBm | VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50 |
| 1dB compression point at output | P-1dB | 10.5 | dBm | IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 2 GHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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