Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 2.6V |
| Current - Collector Cutoff | 400nA |
| Pd - Power Dissipation | 125mW |
| Current - Collector(Ic) | 55mA |
| Collector - Emitter Voltage VCEO | 2.6V |
| Description | Bipolar (BJT) Transistor 2.6V 55mA 125mW Surface Mount TSLP-3 |
| Mfr. Part # | BFR843EL3E6327XTSA1 |
| Package | TSLP-3 |
| Model Number | BFR843EL3E6327XTSA1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 2.6V | Current - Collector Cutoff | 400nA |
| Pd - Power Dissipation | 125mW | Current - Collector(Ic) | 55mA |
| Collector - Emitter Voltage VCEO | 2.6V | Description | Bipolar (BJT) Transistor 2.6V 55mA 125mW Surface Mount TSLP-3 |
| Mfr. Part # | BFR843EL3E6327XTSA1 | Package | TSLP-3 |
| Model Number | BFR843EL3E6327XTSA1 |
The BFR843EL3 is a low noise, dual-band, pre-matched RF bipolar transistor designed for high-speed and low-power consumption applications. It offers a unique combination of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor is suitable for low voltage applications and is qualified for industrial applications.
| Parameter | Symbol | Values | Unit | Note or test condition |
| Collector emitter breakdown voltage | V(BR)CEO | 2.25 - 2.6 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | - 400 | nA | VCE = 1.5 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | - 400 | nA | VCB = 1.5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | - 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 230 - 360 (IC=1mA), 260 - 580 (IC=15mA) | - | VCE = 1.8 V, Pulse measured |
| Collector base capacitance | CCB | 0.07 - 5.26 | pF | f = 1 MHz / 1 GHz, VCB = 1.8 V, VBE = 0, emitter grounded |
| Collector emitter capacitance | CCE | 0.42 | pF | f = 1 MHz, VCE = 1.8 V, VBE = 0, base grounded |
| Emitter base capacitance | CEB | 0.66 | pF | f = 1 MHz, VEB = 0.4 V, VCB = 0, collector grounded |
| Maximum power gain (450 MHz) | Gms | 24.5 - 25.5 | dB | VCE = 1.8 V, IC = 15 mA |
| Minimum noise figure (450 MHz) | NFmin | 0.95 | dB | VCE = 1.8 V, IC = 8 mA |
| 3rd order intercept point at output (450 MHz) | OIP3 | 23 | dBm | ZS = ZL = 50 , IC = 15 mA |
| Maximum power gain (2.4 GHz) | Gms | 22 - 24 | dB | VCE = 1.8 V, IC = 15 mA |
| Minimum noise figure (2.4 GHz) | NFmin | 1 - 20 | dB | VCE = 1.8 V, IC = 8 mA |
| 3rd order intercept point at output (2.4 GHz) | OIP3 | 20.5 | dBm | ZS = ZL = 50 , IC = 15 mA |
| Maximum power gain (5.5 GHz) | Gms | 21.5 - 23 | dB | VCE = 1.8 V, IC = 15 mA |
| Minimum noise figure (5.5 GHz) | NFmin | 1.15 - 21.5 | dB | VCE = 1.8 V, IC = 8 mA |
| 3rd order intercept point at output (5.5 GHz) | OIP3 | 20.5 | dBm | ZS = ZL = 50 , IC = 15 mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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