Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 400nA |
| Pd - Power Dissipation | 75mW |
| Transition frequency(fT) | 85GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 35mA |
| Collector - Emitter Voltage VCEO | 2.25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 2.25V 35mA 85GHz 75mW TSFP-4 |
| Mfr. Part # | BFP840FESDH6327XTSA1 |
| Package | TSFP-4 |
| Model Number | BFP840FESDH6327XTSA1 |
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Product Specification
| Current - Collector Cutoff | 400nA | Pd - Power Dissipation | 75mW |
| Transition frequency(fT) | 85GHz | type | NPN |
| Number | 1 NPN | Current - Collector(Ic) | 35mA |
| Collector - Emitter Voltage VCEO | 2.25V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 2.25V 35mA 85GHz 75mW TSFP-4 | Mfr. Part # | BFP840FESDH6327XTSA1 |
| Package | TSFP-4 | Model Number | BFP840FESDH6327XTSA1 |
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high RF performance and robustness, featuring a maximum RF input power of 20 dBm and 1.5 kV HBM ESD hardness. With a high transition frequency (fT = 85 GHz), it delivers class-leading noise performance (NFmin = 0.75 dB at 5.5 GHz) and high gain (Gms = 23 dB at 5.5 GHz). This transistor is suitable for low voltage applications such as VCC = 1.2 V and 1.8 V, and is qualified for industrial applications.
| Parameter | Symbol | Values | Unit | Note or test condition |
| Collector emitter breakdown voltage | V(BR)CEO | 2.25 - 2.6 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | - - 400 | nA | VCE = 1.5 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | - - 400 | nA | VCB = 1.5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | - - 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 150 - 450 | VCE = 1.8 V, IC = 10 mA, pulse measured | |
| Transition frequency | fT | - 85 - | GHz | VCE = 1.8 V, IC = 25 mA, f = 2 GHz |
| Collector base capacitance | CCB | - 38 - | fF | VCB = 1.8 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | - 0.37 - | pF | VCE = 1.8 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | - 0.37 - | VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded | |
| Maximum power gain | Gms | 23 | dB | 5.5 GHz, 1.8 V, 10 mA |
| Minimum noise figure | NFmin | 0.75 | dB | 5.5 GHz, 1.8 V, 5 mA |
| 3rd order intercept point at output | OIP3 | 22 | dBm | 5.5 GHz, 1.8 V, 10 mA |
| Maximum RF input power | PRFin | - 20 | dBm | |
| HBM ESD hardness | VESD | -1.5 1.5 | kV | HBM, all pins, acc. to JESD22-A114 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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