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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub
China Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub

  1. China Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub

Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub

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Emitter-Base Voltage(Vebo) 2.5V
Pd - Power Dissipation 280mW
Transition frequency(fT) 1.4GHz
type NPN
Number 1 NPN
Current - Collector(Ic) 25mA
Collector - Emitter Voltage VCEO 15V
Description 280mW NPN 25mA 15V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # BFS17PE6327HTSA1
Package SOT-23
Model Number BFS17PE6327HTSA1

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 2.5V Pd - Power Dissipation 280mW
Transition frequency(fT) 1.4GHz type NPN
Number 1 NPN Current - Collector(Ic) 25mA
Collector - Emitter Voltage VCEO 15V Description 280mW NPN 25mA 15V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # BFS17PE6327HTSA1 Package SOT-23
Model Number BFS17PE6327HTSA1

Product Overview

The BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: Pb-free (RoHS compliant)
  • Package: SOT23

Technical Specifications

ParameterSymbolValueUnitNote or Test Condition
Maximum collector-emitter voltageVCEO15V
Maximum collector currentIC25mA
Noise figureNF3.5dBIC = 2 mA, VCE = 5 V, ZS = 50, f = 800 MHz
3rd order output intercept pointOIP321.5dBmVCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt
1 dB output compression pointP-1dB10dBmIC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz
Transition frequencyfT1.4GHzIC = 2 mA, VCE = 5 V, f = 200 MHz
Maximum total power dissipationPtot280mWTS 95 C
Collector-emitter breakdown voltageV(BR)CEO15VIC = 1 mA, IB = 0
DC current gainhFE40 - 150IC = 2 mA, VCE = 1 V pulse measured
Collector-emitter saturation voltageVCEsat0.1 - 0.4VIC = 10 mA, IB = 1 mA
Collector-base capacitanceCcb0.55 - 0.8pFVCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded
Emitter-base capacitanceCeb0.9 - 1.45pFVEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded

2304140030_Infineon-BFS17PE6327HTSA1_C151490.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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