| Emitter-Base Voltage(Vebo) | 9V |
| Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 60W |
| Transition frequency(fT) | 10MHz |
| type | NPN |
| Current - Collector(Ic) | 7A |
| Collector - Emitter Voltage VCEO | 200V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220 |
| Mfr. Part # | BU406-220C |
| Package | TO-220 |
| Model Number | BU406-220C |
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Product Specification
| Emitter-Base Voltage(Vebo) | 9V | Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 60W | Transition frequency(fT) | 10MHz |
| type | NPN | Current - Collector(Ic) | 7A |
| Collector - Emitter Voltage VCEO | 200V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220 | Mfr. Part # | BU406-220C |
| Package | TO-220 | Model Number | BU406-220C |
The BU406 is a high voltage, fast-switching NPN power transistor designed for applications such as high frequency switching power supplies, high frequency power transformation, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, in an environmentally friendly (RoHS) package.
| Parameter | Symbol | Value(min) | Value(typ) | Value(max) | Unit | Tests conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | - | - | 400 | V | |
| Collector-Emitter Voltage (IB=0) | VCEO | - | - | 200 | V | |
| Emitter-Base Voltage | VEBO | - | - | 9 | V | |
| Collector Current (DC) | IC | - | - | 7 | A | |
| Collector Current (pulse) | ICP | - | - | 10 | A | Pulse Width = 5.0 ms, Duty Cycle < 10% |
| Base Current (DC) | IB | - | - | 4 | A | |
| Base Current (pulse) | IBP | - | - | 8 | A | |
| Total Dissipation (TO-220C) | PC | - | - | 60 | W | |
| Total Dissipation (TO-3PB) | PC | - | - | 120 | W | |
| Junction Temperature | Tj | - | - | 150 | ||
| Storage Temperature | Tstg | -55 | - | +150 | ||
| Breakdown Voltage CEO | V(BR)CEO | 200 | - | - | V | IC=10mA,IB=0 |
| Breakdown Voltage CBO | V(BR)CBO | 400 | - | - | V | IC=1mA,IE=0 |
| Breakdown Voltage EBO | V(BR)EBO | 9 | - | - | V | IE=1mA,IC=0 |
| Collector Cut-off Current | ICBO | - | - | 10 | A | VCB=400V, IE=0 |
| Emitter Cut-off Current | ICEO | - | - | 50 | A | VCE=200V,IB=0 |
| Base Cut-off Current | IEBO | - | - | 10 | A | VEB=9V, IC=0 |
| DC Current Gain | Hfe(1) | 60 | - | 85 | VCE =5V, IC=2A | |
| DC Current Gain | Hfe(2) | 15 | - | - | VCE =5V, IC=7A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1.5 | V | IC=5A, IB=500mA |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | V | IC=5A, IB=500mA |
| Transition Frequency | fT | 10 | - | - | MHz | VCE=10V, IC=0.5A |
| Thermal Resistance Junction Case (TO-220C) | Rth(j-c) | - | - | 2.08 | /W | |
| Thermal Resistance Junction Case (TO-247) | Rth(j-c) | - | - | 1.05 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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