| Current - Collector Cutoff | 400nA |
| Pd - Power Dissipation | 125mW |
| Transition frequency(fT) | - |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 55mA |
| Collector - Emitter Voltage VCEO | 2.25V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP843H6327 |
| Package | SOT-343-4 |
| Model Number | BFP843H6327 |
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Product Specification
| Current - Collector Cutoff | 400nA | Pd - Power Dissipation | 125mW |
| Transition frequency(fT) | - | type | NPN |
| Number | 1 NPN | Current - Collector(Ic) | 55mA |
| Collector - Emitter Voltage VCEO | 2.25V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343-4 | Mfr. Part # | BFP843H6327 |
| Package | SOT-343-4 | Model Number | BFP843H6327 |
The BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCEO | 5 | V | TA = 25 C | ||
| Collector-Base Voltage | VCBO | 15 | V | TA = 25 C | ||
| Emitter-Base Voltage | VEBO | 2 | V | TA = 25 C | ||
| Collector Current | IC | 50 | mA | TA = 25 C | ||
| Total Power Dissipation | Ptot | 300 | mW | TA = 25 C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance Junction to Ambient | RthJA | 333 | K/W | SOT343 | ||
| DC Characteristics | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | 0.5 | V | IC = 20 mA, IB = 1 mA, TA = 25 C | |
| DC Current Gain | hFE | 30 | VCE = 1.8 V, IC = 15 mA, TA = 25 C | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | 0.9 | V | IC = 20 mA, IB = 1 mA, TA = 25 C | |
| General AC Characteristics | ||||||
| Current Gain - Bandwidth Product | fT | 12 | GHz | VCE = 1.8 V, IC = 15 mA, TA = 25 C | ||
| Collector-Emitter Breakdown Voltage | VCEO(sus) | 5 | V | IC = 1 mA, TA = 25 C | ||
| Noise Figure (5.5 GHz) | NF | 0.8 | 1.2 | dB | VCE = 1.8 V, IC = 8 mA, ZS = Zopt | |
| Noise Figure (5.5 GHz) | NF | 1.0 | 1.5 | dB | VCE = 1.8 V, IC = 15 mA, ZS = Zopt | |
| Maximum Available Gain (5.5 GHz) | MAG | 16 | dB | VCE = 1.8 V, IC = 15 mA | ||
| 3rd Order Intercept Point (Output) | OIP3 | 35 | dBm | VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz | ||
| 1 dB Compression Point (Output) | OP1dB | 17 | dBm | VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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