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{"title":"Collector Emitter Breakdown Voltage 80V ISC BD680 PNP Darlington Power","imgUrl":"https:\/\/img.chinax.com\/nimg\/c3\/5b\/64c1d239ad29075fd8b3ac5f0978-200x200-1\/collector_emitter_breakdown_voltage_80v_isc_bd680_pnp_darlington_power.jpg","attrs":{"Description":"TO-126 Single Bipolar Transistors RoHS","Mfr. Part #":"BD680","Model Number":"BD680","Package":"TO-126"}}
{"title":"General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP","imgUrl":"https:\/\/img.chinax.com\/nimg\/42\/2a\/b0becc5b28fea620926de6cda198-200x200-1\/general_purpose_power_amplification_transistor_blue_rocket_njw0302gc_silicon_pnp_type_in_to3p_plastic_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"5uA","Pd - Power Dissipation":"150W","Transition frequency(fT)":"30MHz"}}
{"title":"NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for","imgUrl":"https:\/\/img.chinax.com\/nimg\/17\/fb\/4bb3b32b3b946f3d1bc8e6a04bb4-200x200-1\/npn_transistor_cbi_mmbt3904_sot23_package_epitaxial_planar_die_construction_for_electronic_circuits.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"6V","Current - Collector Cutoff":"100nA","Pd - Power Dissipation":"200mW","Transition frequency(fT)":"300MHz"}}
{"title":"NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation","imgUrl":"https:\/\/img.chinax.com\/nimg\/b5\/de\/e084c254f3a240e0cf81429ca92b-200x200-1\/npn_bipolar_transistor_guangdong_hottech_2sc1623_l5_with_200mw_power_dissipation_and_sot23_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"100nA","Pd - Power Dissipation":"200mW","Transition frequency(fT)":"250MHz"}}
{"title":"Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency","imgUrl":"https:\/\/img.chinax.com\/nimg\/b8\/50\/5f3a1ad633bd298a7437a9f54e10-200x200-1\/jilin_sino_microelectronics_3dd13003a_126_npn_transistor_for_high_frequency_switching_power_supplies.jpg","attrs":{"Current - Collector Cutoff":"100uA","Pd - Power Dissipation":"40W","Transition frequency(fT)":"4MHz","type":"NPN"}}
{"title":"Durable NPN silicon transistor Minos TIP41C designed for audio power amplificati","imgUrl":"https:\/\/img.chinax.com\/nimg\/c1\/be\/c836fb0995bb5a040222d4e9c5d2-200x200-1\/durable_npn_silicon_transistor_minos_tip41c_designed_for_audio_power_amplification_in_to220_package.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"5V","Current - Collector Cutoff":"1mA","Pd - Power Dissipation":"65W","Transition frequency(fT)":"3MHz"}}
{"title":"Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and","imgUrl":"https:\/\/img.chinax.com\/nimg\/3f\/29\/22577e6d1c8889e56525f0c26ee9-200x200-1\/automotive_grade_npn_transistor_yangjie_mmbt3904q_with_ul94_v0_flammability_and_aecq101_qualification.jpg","attrs":{"Emitter-Base Voltage(Vebo)":"6V","Current - Collector Cutoff":"50nA","DC Current Gain":"300@10mA,1V","Vce Saturation(VCE(sat))":"300mV@50mA,5mA"}}
The ISC BD680 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -80V and a minimum DC Current Gain of 750 at IC= -1.5 A. This transistor is a complement to the BD679 type and features minimum lot-to-lot variations for robust device performance and reliable operation.