| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 500mW |
| Transition frequency(fT) | 42GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 4V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP650H6327 |
| Package | SOT-343-4 |
| Model Number | BFP650H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 500mW | Transition frequency(fT) | 42GHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 4V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW Surface Mount SOT-343-4 |
| Mfr. Part # | BFP650H6327 | Package | SOT-343-4 |
| Model Number | BFP650H6327 |
The BFP650 is a high linearity silicon germanium bipolar RF transistor designed for RF and protection device applications. This datasheet provides detailed technical specifications, maximum ratings, thermal characteristics, and electrical characteristics, including DC and AC parameters, along with characteristic diagrams and simulation data. The product is supplied in a SOT343 package.
| Parameter | Value | Unit | Notes |
| Product Name | BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor | |
| Revision | 1.1 | 2012-09-13 | |
| Maximum Collector Current (IC) | 100 | mA | |
| Maximum Collector-Emitter Voltage (VCE) | 5 | V | |
| Maximum Base Current (IB) | 10 | mA | |
| Maximum Base-Emitter Voltage (VEB) | -5 | V | Reverse |
| Maximum Power Dissipation (Ptot) | 300 | mW | at TA = 25 C |
| Transition Frequency (fT) | > 60 | GHz | at IC = 70 mA, VCE = 3 V |
| Gain (Gmax) | > 15 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 70 mA |
| Noise Figure (NFmin) | < 1.0 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 30 mA |
| Noise Figure (NF50) | < 1.2 | dB | at f = 2.4 GHz, VCE = 3 V, IC = 30 mA, ZS = 50 |
| 3rd Order Intercept Point (OIP3) | > 35 | dBm | at f = 2.4 GHz, VCE = 3 V, IC = 70 mA, ZS = ZL = 50 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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