Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 42GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 50mA |
| Collector - Emitter Voltage VCEO | 4.1V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 4.1V 50mA 42GHz 200mW Surface Mount SOT-343 |
| Mfr. Part # | BFP640H6327 |
| Package | SOT-343 |
| Model Number | BFP640H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 42GHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 50mA | Collector - Emitter Voltage VCEO | 4.1V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 4.1V 50mA 42GHz 200mW Surface Mount SOT-343 |
| Mfr. Part # | BFP640H6327 | Package | SOT-343 |
| Model Number | BFP640H6327 |
The BFP640 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It is part of Infineons sixth generation transistor family, offering a transition frequency (fT) of 42 GHz. Its high linearity characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.
| Parameter | Symbol | Values | Unit | Note or test condition |
| Minimum noise figure | NFmin | 0.65 | dB | at 1.9 GHz, 3 V, 6 mA |
| High gain | Gma | 24 | dB | at 1.9 GHz, 3 V, 25 mA |
| 3rd order intercept point at output | OIP3 | 26.5 | dBm | at 1.9 GHz, 3 V, 25 mA |
| Transition frequency | fT | 42 | GHz | VCE = 3 V, IC = 30 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.08 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.24 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.51 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Collector emitter breakdown voltage | V(BR)CEO | 4.1 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 1 | nA | VCE = 13 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | 1 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 1 | nA | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 110 | VCE = 3 V, IC = 30 mA, pulse measured |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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