| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 65V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 65V 100mA 250MHz 250mW Surface Mount SOT-363 |
| Mfr. Part # | BCM 846S H6327 |
| Package | SOT-363 |
| Model Number | BCM 846S H6327 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 250MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 65V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 65V 100mA 250MHz 250mW Surface Mount SOT-363 |
| Mfr. Part # | BCM 846S H6327 | Package | SOT-363 |
| Model Number | BCM 846S H6327 |
The BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 65 | V | |
| Collector-emitter voltage | VCES | 80 | V | |
| Collector-base voltage | VCBO | 80 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | IC | 100 | mA | |
| Peak collector current | ICM | 200 | mA | tp 10 ms |
| Total power dissipation | Ptot | 250 | mW | TS = 115 C |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 140 | K/W | 1) |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 65 | V | IC = 10 mA, IB = 0 A |
| Collector-base breakdown voltage | V(BR)CBO | 80 | V | IC = 10 A, IE = 0 A |
| Collector-emitter breakdown voltage | V(BR)CES | 80 | V | IC = 10 A, VBE = 0 A |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE = 10 A, IC = 0 A |
| Collector-base cutoff current | ICBO | - | A | VCB = 30 V, IE = 0 A |
| Collector-base cutoff current | ICBO | 0.015 | A | VCB = 30 V, IE = 0 A, TA = 150 C |
| Collector-base cutoff current | ICBO | 5 | A | VCB = 30 V, IE = 0 A, TA = 150 C |
| DC current gain | hFE | 200 | - | IC = 10 A, VCE = 5 V |
| DC current gain | hFE | 250 ... 290 | - | IC = 2 mA, VCE = 5 V |
| DC current gain | hFE | 450 | - | IC = 10 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCEsat | 90 | mV | IC = 10 mA, IB = 0.5 mA |
| Collector-emitter saturation voltage | VCEsat | 200 ... 300 | mV | IC = 100 mA, IB = 5 mA |
| Collector-emitter saturation voltage | VCEsat | 650 | mV | IC = 100 mA, IB = 5 mA |
| Base emitter saturation voltage | VBEsat | 700 | mV | IC = 10 mA, IB = 0.5 mA |
| Base emitter saturation voltage | VBEsat | 900 | mV | IC = 100 mA, IB = 5 mA |
| Base-emitter voltage | VBE(ON) | 580 ... 660 | mV | IC = 2 mA, VCE = 5 V |
| Base-emitter voltage | VBE(ON) | 700 ... 770 | mV | IC = 10 mA, VCE = 5 V |
| Matching | IC | -10 ... 10 | % | IB = 1 A, VCE1 = VCE2 = 1.0V |
| Matching | IC | -10 ... 10 | % | IB = 100 A, VCE1 = VCE2 = 1.0V |
| AC Characteristics | ||||
| Transition frequency | fT | 250 | MHz | IC = 20 mA, VCE = 5 V, f = 100 MHz |
| Collector-base capacitance | Ccb | 0.95 | pF | VCB = 10 V, f = 1 MHz |
| Emitter-base capacitance | Ceb | 9 | pF | VEB = 0.5 V, f = 1 MHz |
| Short-circuit input impedance | h11e | 4.5 | k | IC = 2 mA, VCE = 5 V, f = 1 kHz |
| Open-circuit reverse voltage transf. ratio | h12e | 2 x 10 | - | IC = 2 mA, VCE = 5 V, f = 1 kHz |
| Open-circuit reverse voltage transf. ratio | h12e | 10 x 10 | - | IC = 2 mA, VCE = 5 V, f = 1 kHz |
| Short-circuit forward current transf. ratio | h21e | 330 | - | IC = 2 mA, VCE = 5 V, f = 1 kHz |
| Open-circuit output admittance | h22e | 30 | S | IC = 2 mA, VCE = 5 V, f = 1 kHz |
| Noise figure | F | 10 | dB | IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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