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Hefei Purple Horn E-Commerce Co., Ltd.

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China Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain
China Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain

  1. China Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain

Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain

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Emitter-Base Voltage(Vebo) 2V
Current - Collector Cutoff 30nA
Pd - Power Dissipation 210mW
Transition frequency(fT) 14GHz
type NPN
Number 1 NPN
Current - Collector(Ic) 35mA
Collector - Emitter Voltage VCEO 6V
Description Bipolar (BJT) Transistor NPN 6V 35mA 14GHz 210mW TSFP-4-1
Mfr. Part # BFR360FH6327XTSA1
Package TSFP-4-1
Model Number BFR360FH6327XTSA1

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 2V Current - Collector Cutoff 30nA
Pd - Power Dissipation 210mW Transition frequency(fT) 14GHz
type NPN Number 1 NPN
Current - Collector(Ic) 35mA Collector - Emitter Voltage VCEO 6V
Description Bipolar (BJT) Transistor NPN 6V 35mA 14GHz 210mW TSFP-4-1 Mfr. Part # BFR360FH6327XTSA1
Package TSFP-4-1 Model Number BFR360FH6327XTSA1

Product Overview

The BFR360F is a low-noise, low-current, and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. Its key features include a minimum noise figure of 1 dB at 1.8 GHz, high gain, and a high OIP3, making it suitable for applications like LNAs for FM/AM radio and sub-1 GHz ISM band applications.

Product Attributes

  • Brand: Infineon
  • Material: Silicon
  • Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Minimum noise figureNFmin1dBat 1.8 GHz, 3 V, 3 mA
High gainGma15.5dBat 1.8 GHz, 3 V, 15 mA
3rd order intercept point at outputOIP324dBmat 1.8 GHz, 3 V, 15 mA, ZS = ZL = 50
Collector emitter breakdown voltageV(BR)CEO6VIC = 1 mA, IB = 0, open base
DC current gainhFE90 - 160-VCE = 3 V, IC = 15 mA, pulse measured
Transition frequencyfT11 - 14GHzVCE = 3 V, IC = 15 mA, f = 1 GHz
Collector base capacitanceCCB0.32 - 0.5pFVCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded
Maximum power dissipationPtot210mWTS 98 C
Junction temperatureTJ150C-
Storage temperatureTStg-55 - 150C-

2407291003_Infineon-BFR360FH6327XTSA1_C7433391.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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