Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.2V |
| Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 185mW |
| Transition frequency(fT) | 65GHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 80mA |
| Collector - Emitter Voltage VCEO | 2.3V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 2.3V 80mA 65GHz 185mW Surface Mount SOT-343-3D |
| Mfr. Part # | BFP620H7764XTSA1 |
| Package | SOT-343-3D |
| Model Number | BFP620H7764XTSA1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.2V | Current - Collector Cutoff | 40nA |
| Pd - Power Dissipation | 185mW | Transition frequency(fT) | 65GHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 80mA | Collector - Emitter Voltage VCEO | 2.3V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 2.3V 80mA 65GHz 185mW Surface Mount SOT-343-3D |
| Mfr. Part # | BFP620H7764XTSA1 | Package | SOT-343-3D |
| Model Number | BFP620H7764XTSA1 |
The BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. This device provides cost competitiveness without compromising ease of use.
| Parameter | Symbol | Values | Unit | Note or test condition |
| Minimum noise figure | NFmin | 0.7 | dB | at 1.8 GHz, 1.5 V, 5 mA |
| High gain (Transducer gain) | Gms |S21| | 21.5 | dB | at 1.8 GHz, 1.5 V, 50 mA |
| 3rd order intercept point at output | OIP3 | 25.5 | dBm | at 1.8 GHz, 2 V, 50 mA |
| Collector emitter breakdown voltage | V(BR)CEO | 2.3 - 2.8 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 10 | A | VCE = 7.5 V, VBE = 0, E-B short circuited (max value limited by test cycle time) |
| Collector base leakage current | ICBO | 1 - 40 | nA | VCB = 5 V, IE = 0, open emitter (max value limited by test cycle time) |
| Emitter base leakage current | IEBO | 10 - 900 | nA | VEB = 0.5 V, IC = 0, open collector (max value limited by test cycle time) |
| DC current gain | hFE | 110 - 270 | VCE = 1.5 V, IC = 50 mA, pulse measured | |
| Transition frequency | fT | 65 | GHz | VCE = 1.5 V, IC = 50 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.12 - 0.2 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.22 | pF | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.46 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Minimum noise figure | NFmin | 1.3 | dB | at 6 GHz, 1.5 V, 5 mA |
| Power gain (Transducer gain) | Gms |S21| | 9.5 | dB | at 6 GHz, 1.5 V, 50 mA |
| Total power dissipation | Ptot | 185 | mW | TS 95 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 - 150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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