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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power transistor WeEn PHE13003C 412 designed for in CFL and off line self
China Power transistor WeEn PHE13003C 412 designed for in CFL and off line self

  1. China Power transistor WeEn PHE13003C 412 designed for in CFL and off line self

Power transistor WeEn PHE13003C 412 designed for in CFL and off line self

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Current - Collector Cutoff 100uA
DC Current Gain 5@1A,2V
Transition frequency(fT) -
Vce Saturation(VCE(sat)) 1.5V
type NPN
Pd - Power Dissipation 2.1W
Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 400V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92
Mfr. Part # PHE13003C,412
Package TO-92
Model Number PHE13003C,412

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100uA DC Current Gain 5@1A,2V
Transition frequency(fT) - Vce Saturation(VCE(sat)) 1.5V
type NPN Pd - Power Dissipation 2.1W
Current - Collector(Ic) 1.5A Collector - Emitter Voltage VCEO 400V
Operating Temperature - Description Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92
Mfr. Part # PHE13003C,412 Package TO-92
Model Number PHE13003C,412

WeEn Semiconductors PHE13003C NPN Power Transistor

The PHE13003C is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching speeds, high typical DC current gain, and a high voltage capability of 700 V, along with very low switching and conduction losses. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.

Product Attributes

  • Brand: WeEn Semiconductors
  • Product Type: NPN power transistor
  • Package: SOT54 (TO-92)

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General
ICcollector current---1.5A
Ptottotal power dissipationTlead ≤ 25 °C; Fig. 1--2.1W
VCESMcollector-emitter peak voltageVBE = 0 V--700V
Static Characteristics
hFEDC current gainIC = 0.5 A; VCE = 2 V; Tlead = 25 °C81725-
hFEDC current gainIC = 1 A; VCE = 2 V; Tlead = 25 °C5915-
ICEScollector-emitter cut-off current (base shorted)VBE = 0 V; VCE = 700 V; Tj = 125 °C--5mA
ICEOcollector-emitter cut-off current (base open)VBE = 0 V; VCE = 700 V; Tj = 25 °C--1mA
VCEOsuscollector-emitter sustaining voltage (base open)IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; Fig. 3; Fig. 4400--V
VCEsatcollector-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--0.5V
VBEsatbase-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--1V
Dynamic Characteristics
tonturn-on timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--1µs
tsstorage timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--4µs
tffall timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--0.7µs

2410010400_WeEn-PHE13003C-412_C256388.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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