| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 200@1A,2V |
| Transition frequency(fT) | - |
| Number | 1 PNP |
| Vce Saturation(VCE(sat)) | 500uV@2A,200mA |
| type | PNP |
| Pd - Power Dissipation | 3W |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 32V 3A 3W Surface Mount PDFN-8-EP(2x3) |
| Mfr. Part # | WPT2N41-8/TR |
| Package | PDFN-8-EP(2x3) |
| Model Number | WPT2N41-8/TR |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 200@1A,2V | Transition frequency(fT) | - |
| Number | 1 PNP | Vce Saturation(VCE(sat)) | 500uV@2A,200mA |
| type | PNP | Pd - Power Dissipation | 3W |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP 32V 3A 3W Surface Mount PDFN-8-EP(2x3) |
| Mfr. Part # | WPT2N41-8/TR | Package | PDFN-8-EP(2x3) |
| Model Number | WPT2N41-8/TR |
The WPT2N41 is a single, PNP bipolar power transistor from Will Semiconductor Ltd. featuring a very low saturation voltage. It is designed for applications such as charging circuits and power management, particularly in portable equipment. This device offers high DC current gain and a continuous collector current of 3A, all within a compact PDFN3x2-8L package.
| Parameter | Symbol | Value | Unit | Test Conditions |
| Collector-emitter voltage | VCEO | -32 | V | |
| Collector-base voltage | VCBO | -45 | V | |
| Emitter-base voltage | VEBO | -6 | V | |
| Continuous collector current (a) | IC | -3 | A | |
| Continuous collector current (b) | IC | -2 | A | |
| Pulse collector current | ICM | -6 | A | |
| Power dissipation (a) | PD | 3 | W | |
| Power dissipation (b) | PD | 1.7 | W | |
| Junction Temperature | TJ | 150 | C | |
| Lead Temperature | TL | 260 | C | |
| Storage Temperature Range | Tstg | -55155 | C | |
| Collector-emitter breakdown voltage | BVCEO | -32 | V | Ic=-10mA, lB=0mA |
| Collector-base breakdown voltage | BVCBO | -45 | V | lc=-100uA, lE=0mA |
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE=-100uA, lc=0mA |
| Collector cutoff current | ICBO | -100 | nA | VCB=-40V |
| Emitter cutoff current | IEBO | -100 | nA | VEB=-5V |
| Collector-emitter saturation voltage (c) | Vce(sat) | -0.2 to -0.5 | mV | IC=-2A, lB=-200mA |
| Base-emitter saturation voltage (c) | Vbe(sat) | -1.0 to -1.5 | V | IC=-2A, lB=-200mA |
| DC current gain (c) | HFE | 100 to 320 | lC=-1A , VCE=-2V | |
| Junction-to-Ambient Thermal Resistance (a) | RJA | 42 | C/W | t 10 s |
| Junction-to-Ambient Thermal Resistance (b) | RJA | 70 | C/W | t 10 s |
| Junction-to-Case Thermal Resistance (d) | RJC | 15 | C/W | Steady State |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!