| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@1A,2V |
| Transition frequency(fT) | - |
| Number | 1 PNP |
| Vce Saturation(VCE(sat)) | 400mV@2A,200mA |
| type | PNP |
| Pd - Power Dissipation | 1.5W |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 30V 3A 1.5W Surface Mount SOT-89-3L |
| Mfr. Part # | WPT2E33-3/TR |
| Package | SOT-89-3L |
| Model Number | WPT2E33-3/TR |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@1A,2V | Transition frequency(fT) | - |
| Number | 1 PNP | Vce Saturation(VCE(sat)) | 400mV@2A,200mA |
| type | PNP | Pd - Power Dissipation | 1.5W |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP 30V 3A 1.5W Surface Mount SOT-89-3L |
| Mfr. Part # | WPT2E33-3/TR | Package | SOT-89-3L |
| Model Number | WPT2E33-3/TR |
The WPT2E33 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is suitable for charging circuits and other power management applications in portable equipment. This device is Pb-free.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter voltage | VCEO | -30 | V | |||
| Collector-base voltage | VCBO | -30 | V | |||
| Emitter-base voltage | VEBO | -6 | V | |||
| Continues collector current (a) | IC | -3 | A | |||
| Continues collector current (b) | IC | -2 | A | |||
| Pulse collector current (c) | ICM | -6 | A | |||
| Power dissipation (a) | PD | 3.0 | W | |||
| Power dissipation (b) | PD | 1.5 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 155 | C | ||
| Collector-emitter breakdown voltage | BVCEO | IC=-10mA, IB=0mA | -30 | V | ||
| Collector-base breakdown voltage | BVCBO | IC=-1mA, IE=0mA | -30 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE=-100uA, IC=0mA | -6 | V | ||
| Collector cutoff current | ICBO | VCB=-30V | -100 | nA | ||
| Emitter cutoff current | IEBO | VEB=-5V | -100 | nA | ||
| Collector-emitter saturation voltage (c) | VCE(sat) | IC=-2A, IB=-200mA | -0.2 | -0.4 | V | |
| Base-emitter saturation voltage (c) | VBE(sat) | IC=-2A, IB=-200mA | -1.0 | -1.5 | V | |
| Base-emitter forward voltage | VBE(on) | IC=-0.5A, VCE=-2V | -0.7 | -1.0 | V | |
| DC current gain (c) | hFE | IC=-1A , VCE=-2V | 100 | 300 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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