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Hefei Purple Horn E-Commerce Co., Ltd.

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China WeEn PHD13005127 NPN power transistor with anti parallel E C diode housed in
China WeEn PHD13005127 NPN power transistor with anti parallel E C diode housed in

  1. China WeEn PHD13005127 NPN power transistor with anti parallel E C diode housed in

WeEn PHD13005127 NPN power transistor with anti parallel E C diode housed in

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Current - Collector Cutoff 100uA
DC Current Gain 10@2A,5V
Transition frequency(fT) -
Vce Saturation(VCE(sat)) 300mV
type NPN
Pd - Power Dissipation 75W
Current - Collector(Ic) 4A
Collector - Emitter Voltage VCEO 400V
Operating Temperature -
Description 10@2A,5V NPN 75W 4A 400V TO-220AB Single Bipolar Transistors RoHS
Mfr. Part # PHD13005,127
Package TO-220AB
Model Number PHD13005,127

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 100uA DC Current Gain 10@2A,5V
Transition frequency(fT) - Vce Saturation(VCE(sat)) 300mV
type NPN Pd - Power Dissipation 75W
Current - Collector(Ic) 4A Collector - Emitter Voltage VCEO 400V
Operating Temperature - Description 10@2A,5V NPN 75W 4A 400V TO-220AB Single Bipolar Transistors RoHS
Mfr. Part # PHD13005,127 Package TO-220AB
Model Number PHD13005,127

Product Overview

High voltage, high speed, planar passivated NPN power switching transistor with an integrated anti-parallel E-C diode, housed in a SOT78 plastic package. This transistor offers fast switching, high voltage capability, and low thermal resistance, making it suitable for various power applications.

Product Attributes

  • Brand: WeEn Semiconductors
  • Origin: Established as a global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd.

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General Description
-Product TypeNPN power transistor with integrated diode----
-PackageSOT78 (TO-220AB)----
Quick Reference Data
ICcollector currentsee Figure 1; see Figure 2; see Figure 4; DC--4A
Ptottotal power dissipationsee Figure 3; Tmb 25 C--75W
VCESMcollector-emitter peak voltageVBE = 0 V--700V
hFEDC current gainVCE = 5 V; IC = 1.0 A; see Figure 10122040V
hFEDC current gainVCE = 5 V; IC = 2.0 A; see Figure 10101728V
Limiting Values
VCESMcollector-emitter peak voltageVBE = 0 V--700V
VCBOcollector-base voltageIE = 0 A--700V
VCEOcollector-emitter voltageIB = 0 A--400V
ICcollector currentDC; see Figure 1; see Figure 2; see Figure 4--4A
ICMpeak collector currentsee Figure 4; see Figure 1; see Figure 2--8A
IBbase currentDC--2A
IBMpeak base current--4A
Ptottotal power dissipationTmb 25 C; see Figure 3--75W
Tstgstorage temperature-65-150C
Tjjunction temperature--150C
Thermal Characteristics
Rth(j-mb)thermal resistance from junction to mounting basesee Figure 5--1.67K/W
Rth(j-a)thermal resistance from junction to ambientin free air-60-K/W
Static Characteristics
ICEScollector-emitter cut-off currentVBE = 0 V; VCE = 700 V; Tj = 100 C [1]--5mA
ICEScollector-emitter cut-off currentVBE = 0 V; VCE = 700 V [1]--1mA
ICBOcollector-base cut-off currentVCB = 700 V; IE = 0 A [1]--1mA
ICEOcollector-emitter cut-off currentVCE = 400 V; IB = 0 A [1]--0.1mA
IEBOemitter-base cut-off currentVEB = 9 V; IC = 0 A--10mA
VCEOsuscollector-emitter sustaining voltageIB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 15400--V
VCEsatcollector-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; see Figure 7; see Figure 8-0.10.5V
VCEsatcollector-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; see Figure 7; see Figure 8-0.20.6V
VCEsatcollector-emitter saturation voltageIC = 4.0 A; IB = 1.0 A; see Figure 7; see Figure 8-0.31V
VBEsatbase-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; see Figure 9-0.921.6V
VBEsatbase-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; see Figure 9-0.851.2V
VFforward voltageIF = 2.0 A-1.041.5V
hFEDC current gainIC = 1.0 A; VCE = 5 V; see Figure 10122040-
hFEDC current gainIC = 2.0 A; VCE = 5 V; see Figure 10101728-
Dynamic Characteristics
tsstorage timeIC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; inductive load; see Figure 11; see Figure 12-1.22s
tsstorage timeIC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; resistive load; see Figure 13; see Figure 14-2.74s
tsstorage timeIC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 11; see Figure 12-1.44s
tffall timeIC = 2.0 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; resistive load; see Figure 13; see Figure 14-0.30.9s
tffall timeIC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tj = 100 C; inductive load; see Figure 11; see Figure 12-0.160.9s
tffall timeIC = 2.0 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; inductive load; see Figure 11; see Figure 12-0.10.5s

2410121804_WeEn-PHD13005-127_C256391.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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