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Hefei Purple Horn E-Commerce Co., Ltd.

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China Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting
China Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting

  1. China Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting

Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting

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Emitter-Base Voltage(Vebo) 9V
Current - Collector Cutoff -
DC Current Gain 25@0.5A,2V
Transition frequency(fT) -
Vce Saturation(VCE(sat)) 1.5V
type NPN
Pd - Power Dissipation 2.1W
Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 400V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92
Mfr. Part # PHD13003C,126
Package TO-92
Model Number PHD13003C,126

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 9V Current - Collector Cutoff -
DC Current Gain 25@0.5A,2V Transition frequency(fT) -
Vce Saturation(VCE(sat)) 1.5V type NPN
Pd - Power Dissipation 2.1W Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 400V Operating Temperature -
Description Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92 Mfr. Part # PHD13003C,126
Package TO-92 Model Number PHD13003C,126

Product Overview

The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.

Product Attributes

  • Brand: WeEn Semiconductors (formerly NXP Semiconductors)
  • Package Type: SOT54 (TO-92) plastic package

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General Description
ICCollector current (DC)---1.5A
PtotTotal power dissipationTlead ≤25 °C; see Figure 1--2.1W
VCESMCollector-emitter peak voltageVBE = 0 V--700V
Static Characteristics
hFEDC current gainIC = 0.5 A; VCE = 2 V; Tj = 25 °C81725-
hFEDC current gainIC = 1 A; VCE = 2 V; Tj = 25 °C5915-
ICESCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V--1mA
ICESCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V; Tj = 100 °C--5mA
ICEOCollector-emitter cut-off currentVCE = 400 V; IB = 0 A; Tlead = 25 °C--0.1mA
IEBOEmitter-base cut-off currentVEB = 9 V; IC = 0 A; Tlead = 25 °C--1mA
VCEOsusCollector-emitter sustaining voltageIB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see Figure 4400--V
VCEsatCollector-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--0.5V
VCEsatCollector-emitter saturation voltageIC = 1 A; IB = 0.25 A; Tlead = 25 °C--1V
VCEsatCollector-emitter saturation voltageIC = 1.5 A; IB = 0.5 A; Tlead = 25 °C--1.5V
VBEsatBase-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--1V
VBEsatBase-emitter saturation voltageIC = 1 A; IB = 0.25 A; Tlead = 25 °C--1.2V
VFForward voltageIF = 0.5 A; Tj = 25 °C--1.5V
Dynamic Characteristics
tonTurn-on timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6--1µs
tsStorage timeIC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8-0.8-µs
tfFall timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6--0.7µs
tfFall timeIC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8-0.1-µs
Limiting Values
VCESMCollector-emitter peak voltageVBE = 0 V--700V
VCBOCollector-base voltageIE = 0 A--700V
VCEOCollector-emitter voltageIB = 0 A--400V
ICCollector current (DC)---1.5A
ICMPeak collector current---3A
IBBase current (DC)---0.75A
IBMPeak base current---1.5A
PtotTotal power dissipationTlead ≤25 °C; see Figure 1--2.1W
TstgStorage temperature-65-150°C
TjJunction temperature--150°C
VEBOEmitter-base voltageIC = 0 A; I(Emitter) = 10 mA--9V
Thermal Characteristics
Rth(j-lead)Thermal resistance from junction to leadsee Figure 2--60K/W
Rth(j-a)Thermal resistance from junction to ambientin free air; printed-circuit board mounted; lead length = 4 mm-150-K/W

2410121840_WeEn-PHD13003C-126_C256387.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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