| Emitter-Base Voltage(Vebo) | 9V |
| Current - Collector Cutoff | - |
| DC Current Gain | 25@0.5A,2V |
| Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 1.5V |
| type | NPN |
| Pd - Power Dissipation | 2.1W |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92 |
| Mfr. Part # | PHD13003C,126 |
| Package | TO-92 |
| Model Number | PHD13003C,126 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 9V | Current - Collector Cutoff | - |
| DC Current Gain | 25@0.5A,2V | Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 1.5V | type | NPN |
| Pd - Power Dissipation | 2.1W | Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92 | Mfr. Part # | PHD13003C,126 |
| Package | TO-92 | Model Number | PHD13003C,126 |
The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Description | ||||||
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead ≤25 °C; see Figure 1 | - | - | 2.1 | W |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| Static Characteristics | ||||||
| hFE | DC current gain | IC = 0.5 A; VCE = 2 V; Tj = 25 °C | 8 | 17 | 25 | - |
| hFE | DC current gain | IC = 1 A; VCE = 2 V; Tj = 25 °C | 5 | 9 | 15 | - |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V | - | - | 1 | mA |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V; Tj = 100 °C | - | - | 5 | mA |
| ICEO | Collector-emitter cut-off current | VCE = 400 V; IB = 0 A; Tlead = 25 °C | - | - | 0.1 | mA |
| IEBO | Emitter-base cut-off current | VEB = 9 V; IC = 0 A; Tlead = 25 °C | - | - | 1 | mA |
| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see Figure 4 | 400 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 0.5 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 0.25 A; Tlead = 25 °C | - | - | 1 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 1.5 A; IB = 0.5 A; Tlead = 25 °C | - | - | 1.5 | V |
| VBEsat | Base-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 °C | - | - | 1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 0.25 A; Tlead = 25 °C | - | - | 1.2 | V |
| VF | Forward voltage | IF = 0.5 A; Tj = 25 °C | - | - | 1.5 | V |
| Dynamic Characteristics | ||||||
| ton | Turn-on time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 | - | - | 1 | µs |
| ts | Storage time | IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 | - | 0.8 | - | µs |
| tf | Fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6 | - | - | 0.7 | µs |
| tf | Fall time | IC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8 | - | 0.1 | - | µs |
| Limiting Values | ||||||
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| VCBO | Collector-base voltage | IE = 0 A | - | - | 700 | V |
| VCEO | Collector-emitter voltage | IB = 0 A | - | - | 400 | V |
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| IB | Base current (DC) | - | - | - | 0.75 | A |
| IBM | Peak base current | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead ≤25 °C; see Figure 1 | - | - | 2.1 | W |
| Tstg | Storage temperature | -65 | - | 150 | °C | |
| Tj | Junction temperature | - | - | 150 | °C | |
| VEBO | Emitter-base voltage | IC = 0 A; I(Emitter) = 10 mA | - | - | 9 | V |
| Thermal Characteristics | ||||||
| Rth(j-lead) | Thermal resistance from junction to lead | see Figure 2 | - | - | 60 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; printed-circuit board mounted; lead length = 4 mm | - | 150 | - | K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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