| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50uA |
| DC Current Gain | 10@3A,4V |
| Transition frequency(fT) | 3MHz |
| Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 1.2V@3A,0.375A |
| type | NPN |
| Pd - Power Dissipation | 1.6W |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.6W Surface Mount TO-252 |
| Mfr. Part # | MJD31CQ |
| Package | TO-252 |
| Model Number | MJD31CQ |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50uA |
| DC Current Gain | 10@3A,4V | Transition frequency(fT) | 3MHz |
| Number | 1 NPN | Vce Saturation(VCE(sat)) | 1.2V@3A,0.375A |
| type | NPN | Pd - Power Dissipation | 1.6W |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.6W Surface Mount TO-252 |
| Mfr. Part # | MJD31CQ | Package | TO-252 |
| Model Number | MJD31CQ |
The MJD31CQ is an NPN Power Transistor designed for general purpose amplifier and low speed switching applications. It features an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. The device is moisture sensitivity level 1 and AEC-Q101 qualified.
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | V | 100 | |||
| Collector-Emitter Voltage | VCEO | V | 100 | |||
| Emitter-Base Voltage | VEBO | V | 5 | |||
| Collector Current -Continuous | IC | A | 3 | |||
| Total Device Dissipation (*) | PD | W | (Ta=25) | 1.6 | ||
| Thermal Resistance, Junction to Ambient Air (*) | RthJA | /W | (Ta=25) | 79 | ||
| Thermal Resistance, Junction to Mounting Base | RthJ-mb | /W | 8.3 | |||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | VCBO | V | IC= 1mA, IE=0 | 100 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= 30mA, IB=0 | 100 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= 1mA, IC=0 | 5 | ||
| Collector-base cut-off current | ICEO | uA | VCE= 60V, IB =0 | 50 | ||
| Collector-base cut-off current | ICES | uA | VCE= 100V , VEB=0 | 20 | ||
| Emitter-base cut-off current | IEBO | mA | VEB= 5V , IC=0 | 1 | ||
| DC current gain | hFE | VCE= 4V, IC= 1A | 25 | |||
| DC current gain | hFE | VCE= 4V, IC= 3A | 10 | 75 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC= 3A, IB= 0.375A | 1.2 | ||
| Base-emitter voltage | VBE | V | IC= 3A, VCE= 4V | 1.8 | ||
| Other Characteristics | ||||||
| Transition frequency | fT | MHz | VCE= 10V, IC= 0.5A, f=1KHz | 3 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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