Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 50MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42_R1_00001 |
| Package | SOT-23 |
| Model Number | MMBTA42_R1_00001 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 50MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42_R1_00001 | Package | SOT-23 |
| Model Number | MMBTA42_R1_00001 |
The MMBTA42 is an NPN silicon planar high voltage transistor designed for various applications requiring a 300V breakdown voltage and a power dissipation of 250mW. It features a lead-free design compliant with EU RoHS 2.0 and uses a green molding compound. The transistor is housed in a SOT-23 plastic package.
| Parameter | Symbol | Value | Units | Notes |
| Collector-Emitter Voltage | V CEO | 300 | V | |
| Collector Current (Continuous) | I C | 500 | mA | |
| Max Power Dissipation | P TOT | 250 | mW | Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. |
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 300 | V | I C=1mA, I B=0 |
| Collector-Base Breakdown Voltage | V (BR)CBO | 300 | V | I C=100A, I E=0 |
| Emitter-Base Breakdown Voltage | V (BR)EBO | 6 | V | I E=100A, I C=0 |
| Collector Cut-off Current | I CBO | 100 | nA | V CB=200V, I E=0V |
| Emitter Cut-off Current | I EBO | 100 | nA | V CE=6V, I C=0 |
| DC Current Gain | hFE | 25 - 40 | V CE=10V, I C=1.0mA to 30mA | |
| Collector-Emitter Saturation Voltage | V CE(SAT) | 0.5 | V | I C=20mA, I B=2mA |
| Base-Emitter Saturation Voltage | V BE(SAT) | 0.9 | V | I C=20mA, I B=2mA |
| Collector-Base Capacitance | C CB | 3 | pF | V CB=20V, I E=0, f=1MHz |
| Collector Gain - Bandwidth Product | f T | 50 | MHz | I C=10mA, V CE=20V, f=100MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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