Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 480mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 20V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 20V 1A 100MHz 480mW Surface Mount SOT-23 |
| Mfr. Part # | PBSS4120T,215 |
| Package | SOT-23 |
| Model Number | PBSS4120T,215 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 480mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 20V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 20V 1A 100MHz 480mW Surface Mount SOT-23 |
| Mfr. Part # | PBSS4120T,215 | Package | SOT-23 |
| Model Number | PBSS4120T,215 |
The Nexperia PBSS4120T is an NPN BISS transistor in a SOT23 plastic package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to high efficiency and reduced heat generation. This transistor serves as a cost-effective alternative to MOSFETs in specific applications, particularly in power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driver scenarios (low supply voltage applications, inductive load drivers like relays, buzzers, and motors). Its PNP complement is the PBSS5120T.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 20 | V |
| IC | Collector current (DC) | - | - | - | 1 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| RCEsat | Equivalent on-resistance | - | - | - | 200 | m |
| VCEO | Collector-emitter voltage | Open base | - | - | 20 | V |
| VCBO | Collector-base voltage | Open emitter | - | - | 30 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IC | Collector current (DC) | - | - | - | 1 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| IBM | Peak base current | - | - | - | 300 | mA |
| Ptot | Total power dissipation | Tamb 25 C; note 1 | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C; note 2 | - | - | 480 | mW |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Operating ambient temperature | - | -65 | - | +150 | C |
| Rth j-a | Thermal resistance from junction to ambient | In free air; note 1 | - | 417 | - | K/W |
| Rth j-a | Thermal resistance from junction to ambient | In free air; note 2 | - | 260 | - | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 4 V; IC = 0 | - | - | 100 | nA |
| hFE | DC current gain | VCE = 2 V; IC = 100 mA | 350 | 470 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA | 300 | 450 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A | 280 | 420 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 1 mA | - | - | 80 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA | - | - | 110 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 750 mA; IB = 15 mA | - | - | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; note 1 | - | - | 250 | mV |
| RCEsat | Equivalent on-resistance | IC = 500 mA; IB = 50 mA; note 1 | - | - | 220 | m |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 100 mA; note 1 | - | - | 1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 100 mA | - | - | 0.75 | V |
| fT | Transition frequency | IC = 100 mA; VCE = 10 V; f = 100 MHz | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = Ie = 0; f = 1 MHz | - | - | 20 | pF |
Dimensions (mm):
| Symbol | A | A1 | bp | c | D | E | e | e1 | HE | Lp | Q | w |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Min. | 0.9 | 0.01 | 0.38 | 0.09 | 2.8 | 1.2 | 1.9 | - | - | - | - | - |
| Typ. | 1.1 | - | 0.48 | 0.15 | 3.0 | 1.4 | 2.5 | 0.95 | - | - | - | - |
| Max. | - | - | 0.45 | 0.15 | 3.1 | 1.6 | 2.7 | 1.05 | - | - | - | - |
Note: Dimensions are in mm.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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