| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 60V |
| Description | Bipolar (BJT) Transistor PNP 60V 600mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT2907 |
| Package | SOT-23 |
| Model Number | PMBT2907 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 200MHz |
| type | PNP | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 60V | Description | Bipolar (BJT) Transistor PNP 60V 600mA 250mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT2907 | Package | SOT-23 |
| Model Number | PMBT2907 |
The PMBT2907A is a PNP epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. This transistor is recommended as a complementary type to the NPN transistor PMBT2222A.
| Symbol | Parameter | Test conditions | MIN | TYP | MAX | UNIT |
| VCBO | Collector-base Voltage | -60 | V | |||
| VCEO | Collector-emitter Voltage | -60 | V | |||
| VEBO | Emitter-base Voltage | -5 | V | |||
| IC | Collector Current -Continuous | -600 | mA | |||
| PC | Total Device Dissipation | 0.5 | W | |||
| RJA | Thermal Resistance Junction to Ambient | 500 | /W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=-10A,IE=0 | -60 | V | ||
| V(BR)CEO* | Collector-emitter breakdown voltage | IC=-10mA,IB=0 | -60 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A,IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-50V,IE=0 | -20 | nA | ||
| IEBO | Base cut-off current | VCE=-3V, IC =0 | -10 | nA | ||
| ICEX | Collector cut-off current | VCE=-30 V, VBE(off) =-0.5V | -50 | nA | ||
| hFE | DC current gain | VCE=-10V,IC=-150mA | 100 | 300 | ||
| VCE=-10V,IC=-0.1mA | 75 | |||||
| VCE=-10V,IC=-1mA | 100 | |||||
| VCE=-10V,IC=-10mA | 100 | |||||
| VCE=-10V,IC=-500mA | 50 | |||||
| VCE(sat)* | Collector-emitter saturation voltage | IC=-150mA,IB=-15mA | -0.4 | V | ||
| IC=-500mA,IB=-50mA | -1.6 | V | ||||
| VBE(sat)* | Base-emitter saturation voltage | IC=-150mA,IB=-15mA | -1.3 | V | ||
| IC=-500mA,IB=-50mA | -2.6 | V | ||||
| fT | Transition frequency | VCE=-20V,IC=-50mA,f=100MHz | 200 | MHz | ||
| td | Delay time | 10 | nS | |||
| tr | Rise time | VCE=-30V,IC=-150mA,B1=-15mA | 25 | nS | ||
| tS | Storage time | 225 | nS | |||
| tf | Fall time | VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA | 60 | nS |
*Pulse test: tp300S, 0.02.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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