Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.25W |
| Transition frequency(fT) | 220MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 60V 1A 220MHz 1.25W Surface Mount SOT-23 |
| Mfr. Part # | PBSS4160T,215 |
| Package | SOT-23 |
| Model Number | PBSS4160T,215 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.25W | Transition frequency(fT) | 220MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 60V 1A 220MHz 1.25W Surface Mount SOT-23 |
| Mfr. Part # | PBSS4160T,215 | Package | SOT-23 |
| Model Number | PBSS4160T,215 |
Product Overview
The Nexperia PBSS4160T is a high-performance NPN low VCEsat (BISS) transistor designed for demanding applications. Encased in a compact SOT23 plastic package, this transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high efficiency, leading to reduced heat generation and smaller printed-circuit board footprints. Its robust design makes it suitable for power management tasks such as DC-to-DC conversion and supply line switching, as well as peripheral and inductive load driving in automotive, telecom infrastructure, and industrial segments.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 60 | V |
| IC | Collector current | [1] | - | - | 1 | A |
| ICM | Peak collector current | or limited by Tj(max); tp = 1 ms | - | - | 2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 1 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 200 | 250 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 80 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IB | Base current | - | - | 300 | mA | |
| IBM | Peak base current | tp 300 s; 0.02 | - | - | 1 | A |
| Ptot | Total power dissipation | Tamb 25 C [1][3] | - | - | 1.25 | W |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 465 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [2] | - | - | 312 | K/W |
| ICBO | Collector-base cut-off current | VCB = 60 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICES | Collector-emitter cut-off current | VCE = 60 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 1 mA; Tamb = 25 C | 250 | 400 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | 110 | 140 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C | - | 0.95 | 1.1 | V |
| fT | Transition frequency | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C | 150 | 220 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 5.5 | 10 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Pulsed; tp 10 ms; 0.02.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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