| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | - |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 1500mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | SS8050 |
| Package | SOT-23 |
| Model Number | SS8050 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | - |
| Current - Collector(Ic) | 1.5A | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 40V 1500mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | SS8050 | Package | SOT-23 |
| Model Number | SS8050 |
The SS8050 is an NPN Plastic-Encapsulated Transistor in a SOT-23 Small Outline Plastic Package. It features epitaxial planar die construction and is halogen-free and RoHS compliant. As a complementary type, the PNP transistor SS8550 is recommended.
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT | Notes |
| Collector-Base Voltage | VCBO | 40 | V | ||||
| Collector-Emitter Voltage | VCEO | 25 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current-Continuous | IC | 1500 | mA | C=1.5A | |||
| Collector Power Dissipation | PC | 300 | mW | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55 | +150 | ||||
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | ||||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | |||
| Collector Cut-off Current | ICBO | VCB=40V, IE=0 | 0.1 | A | |||
| Emitter Cut-off Current | IEBO | VEB= 5V, IC=0 | 0.1 | A | |||
| DC Current Gain (hFE(1)) | hFE(1) | VCE=1V, IC= 100mA | 120 | 400 | RANK L: 120-200, H: 200-350, J: 300-400 | ||
| DC Current Gain (hFE(2)) | hFE(2) | VCE=1V, IC= 800mA | 40 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | |||
| Transition Frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz |
| Symbol | MILLIMETER MIN | MILLIMETER MAX | INCHES MIN | INCHES MAX |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 BSC | 0.037 BSC | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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