Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 550mW |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~150℃ |
| Description | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 550mW TSSOP-6(SOT-363) |
| Mfr. Part # | PMBT2907AYSX |
| Package | TSSOP-6(SOT-363) |
| Model Number | PMBT2907AYSX |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 550mW | Transition frequency(fT) | 200MHz |
| type | PNP | Number | 2 PNP |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~150℃ | Description | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 550mW TSSOP-6(SOT-363) |
| Mfr. Part # | PMBT2907AYSX | Package | TSSOP-6(SOT-363) |
| Model Number | PMBT2907AYSX |
The Nexperia PMBT2907AYS is a double PNP switching transistor designed for general-purpose switching and linear amplification applications. It features AEC-Q101 qualification, making it suitable for automotive applications. This device is housed in a compact SOT363 (TSSOP6) surface-mounted plastic package.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | -60 | V |
| IC | Collector current | - | - | - | -600 | mA |
| VCBO | Collector-base voltage | open emitter | - | - | -60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -5 | V |
| ICM | Peak collector current | - | - | - | -800 | mA |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | -200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [2] | - | - | 417 | K/W |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A; Tamb = 25 C | - | - | -10 | nA |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A; Tj = 125 C | - | - | -10 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -50 | nA |
| hFE | DC current gain | VCE = -10 V; IC = -0.1 mA; Tamb = 25 C | 75 | - | - | - |
| hFE | DC current gain | VCE = -10 V; IC = -1 mA; Tamb = 25 C | 100 | - | - | - |
| hFE | DC current gain | VCE = -10 V; IC = -10 mA; Tamb = 25 C | 100 | - | - | - |
| hFE | DC current gain | VCE = -10 V; IC = -150 mA; tp 300 s; 0.02; Tamb = 25 C | 100 | - | 300 | - |
| hFE | DC current gain | VCE = -10 V; IC = -500 mA; tp 300 s; 0.02; Tamb = 25 C | 50 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -150 mA; IB = -15 mA; tp 300 s; 0.02; Tamb = 25 C | - | - | -400 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; tp 300 s; 0.02; Tamb = 25 C | - | - | -1.6 | V |
| VBEsat | Base-emitter saturation voltage | IC = -150 mA; IB = -15 mA; tp 300 s; 0.02; Tamb = 25 C | - | - | -1.3 | V |
| VBEsat | Base-emitter saturation voltage | IC = -500 mA; IB = -50 mA; tp 300 s; 0.02; Tamb = 25 C | - | - | -2.6 | V |
| td | Delay time | - | - | - | 12 | ns |
| tr | Rise time | - | - | - | 30 | ns |
| ton | Turn-on time | - | - | - | 40 | ns |
| ts | Storage time | - | - | - | 300 | ns |
| tf | Fall time | - | - | - | 65 | ns |
| toff | Turn-off time | IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 C | - | - | 365 | ns |
| CC | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 8 | pF |
| CE | Emitter capacitance | VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 30 | pF |
| fT | Transition frequency | VCE = -20 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C | 200 | - | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 400 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 550 | mW |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 313 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [2] | - | - | 227 | K/W |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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