| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT5551-AU_R1_000A2 |
| Package | SOT-23 |
| Model Number | MMBT5551-AU_R1_000A2 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 250mW Surface Mount SOT-23 | Mfr. Part # | MMBT5551-AU_R1_000A2 |
| Package | SOT-23 | Model Number | MMBT5551-AU_R1_000A2 |
The MMBT5551-AU is an NPN Silicon planar design high voltage transistor. It features a collector-emitter voltage of 160V and a continuous collector current of 600mA. This AEC-Q101 qualified component is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard. It is housed in a SOT-23 plastic package.
| Parameter | Symbol | Value | Units | Test Condition |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Collector-Base Voltage | VCBO | 180 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current Continuous | IC | 600 | mA | |
| Max Power Dissipation (Note 1) | PD | 250 | mW | (TA=25 oC) |
| Thermal Resistance, Junction to Ambient (Note 1) | RJA | 325 | OC/W | (TA=25 oC) |
| Operating Junction Temperature and Storage Temperature Range | TJ,TSTG | -55 to +150 | OC | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=1mA,IB=0A |
| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=100uA,IE=0A |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10uA,IC=0A |
| Collector-Base Cut-off Current | ICBO | 50 | nA | VCB=120V,IE=0A |
| Emitter-Base Cut-off Current | IEBO | 50 | nA | VEB=4V,IC=0A |
| DC Current Gain | hFE | 80-250 | - | VCE=5V,IC=1mA to 50mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 200 | mV | IC=50mA,IB=5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC=50mA,IB=5mA |
| Collector-Base Capacitance | CBO | 6 | pF | VCB=10V,IE=0A,f=1MHz |
| Emitter-Base Capacitance | CEBO | 30 | pF | VEB=500mV,IC=0A,f=1MHz |
| Transition Frequency | FT | 300 | MHz | IC=10mA,VCE=10V,f=100MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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