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China High Collector Current PNP Transistor Nexperia BCP51TF SOT223 Package for Power
China High Collector Current PNP Transistor Nexperia BCP51TF SOT223 Package for Power

  1. China High Collector Current PNP Transistor Nexperia BCP51TF SOT223 Package for Power

High Collector Current PNP Transistor Nexperia BCP51TF SOT223 Package for Power

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 1.8W
Transition frequency(fT) 140MHz
type PNP
Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 45V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 45V 1A 140MHz 1.8W Surface Mount SOT-223
Mfr. Part # BCP51TF
Package SOT-223
Model Number BCP51TF

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 1.8W Transition frequency(fT) 140MHz
type PNP Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 45V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 45V 1A 140MHz 1.8W Surface Mount SOT-223 Mfr. Part # BCP51TF
Package SOT-223 Model Number BCP51TF

Product Overview

The Nexperia BCP51T series comprises PNP medium power transistors designed for surface-mounting in a SOT223 (SC-73) plastic package. These transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation capabilities. They are AEC-Q101 qualified, making them suitable for demanding applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT223 (SC-73)
  • Semiconductor Type: PNP Medium Power Transistor
  • Qualification: AEC-Q101 Qualified

Technical Specifications

Model NPN Complement Package VCEO (Max) IC (Max) ICM (Max) DC Current Gain (hFE)
BCP51T BCP54T SOT223 (SC-73) 45 V 1 A 2 A 63 - 250 (BCP51T)
BCP51-10T BCP54-10T 63 - 160 (BCP51-10T)
BCP51-16T BCP54-16T 100 - 250 (BCP51-16T)

Key Characteristics (Tamb = 25 C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -45 V
IC Collector current - - - -1 A
ICM Peak collector current Single pulse; tp 1 ms - - -2 A
hFE DC current gain VCE = -2 V; IC = -150 mA (pulsed; tp 300 s; 0.02) 63 - 250 -
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A -45 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -2 mA; IE = 0 A -45 - - V
V(BR)EBO Emitter-base breakdown voltage IE = -100 A; IC = 0 A -5 - - V
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A - - -100 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA (pulsed; tp 300 s; 0.02) - - -500 mV
VBE Base-emitter voltage VCE = -2 V; IC = -500 mA (pulsed; tp 300 s; 0.02) - - -1 V
fT Transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz 100 140 - MHz
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF

Pinning Information

Pin Symbol Description
1 B Base
2, 4 C Collector
3 E Emitter

Ordering Information

Type number Package Name Description
BCP51T SC-73 Plastic, surface-mounted package with increased heatsink; 4 leads SOT223
BCP51-10T
BCP51-16T

Marking

Type number Marking code
BCP51T BCP51T
BCP51-10T P5110T
BCP51-16T P5116T

Limiting Values

Tamb = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage Open emitter - -45 V
VCEO Collector-emitter voltage Open base - -45 V
VEBO Emitter-base voltage Open collector - -5 V
IC Collector current - - -1 A
ICM Peak collector current Single pulse; tp 1 ms - -2 A
IB Base current - - -0.2 A
IBM Peak base current Single pulse; tp 1 ms - -0.3 A
Ptot Total power dissipation Tamb 25 C [1] - 0.6 W
Tamb 25 C [2] - 1 W
Tamb 25 C [3] - 1.3 W
Tamb 25 C [4] - 1.3 W
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -55 150 C
Tstg Storage temperature - -65 150 C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.

[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.


2410010201_Nexperia-BCP51TF_C549570.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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