Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 10nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 200mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT2222A |
| Package | SOT-23 |
| Model Number | PMBT2222A |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 10nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V | Description | Bipolar (BJT) Transistor NPN 40V 600mA 200mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT2222A | Package | SOT-23 |
| Model Number | PMBT2222A |
The PMBT2222A is an NPN epitaxial planar die construction transistor housed in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. This transistor is suitable for various electronic applications.
| Symbol | Parameter | Test Condition | Min | Max | Unit |
| Breakdown Voltages | V(BR)CBO | Collector-base breakdown voltage, IC=10uA, IE=0 | 75 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage, IC=1mA, IB=0 | 75 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage, IE=10uA, IC=0 | 6 | V | ||
| VCBO | Collector-Base Voltage | 60 | V | ||
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| Currents | ICBO | Collector cut-off current, VCB=60V, IE=0 | 10 | nA | |
| IEBO | Emitter cut-off current, VEB=3V, IC=0 | 10 | nA | ||
| Saturation Voltages | VCE(sat)1* | Collector-emitter saturation voltage, IC=500mA, IB=50mA | 1.00 | V | |
| VCE(sat)2* | Collector-emitter saturation voltage, IC=150mA, IB=15mA | 0.30 | V | ||
| Base-Emitter Saturation Voltages | VBE(sat)1* | Base-emitter saturation voltage, IC=500mA, IB=50mA | 2.00 | V | |
| VBE(sat)2* | Base-emitter saturation voltage, IC=150mA, IB=15mA | 1.20 | V | ||
| DC Current Gain | hFE(1)* | VCE=10V, IC=150mA | 100 | 300 | |
| hFE(2)* | VCE=10V, IC=0.1mA | 100 | |||
| hFE(3)* | VCE=10V, IC=500mA | 300 | |||
| Switching Times | td | Delay time, VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA | 25 | nS | |
| tr | Rise time | 225 | nS | ||
| ts | Storage time, VCC=30V, IC=150mA, IB1=IB2=15mA | 60 | nS | ||
| tf | Fall time | 300 | nS | ||
| Transition Frequency | fT | VCE=20V, IC=20mA,f=100MHz | 300 | MHz | |
| Thermal Resistance | RJA | Thermal Resistance Junction to Ambient | 625 | /W | |
| Maximum Power Dissipation | PC | Total Dissipated Power | 625 | mW | |
| Operating & Storage Temperatures | TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55 | +150 |
| SYMBOL | MILLIMETER | INCHES | ||
| MIN | MAX | MIN | MAX | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| E | 2.250 | 2.550 | 0.089 | 0.100 |
| E1 | 1.200 | 1.400 | 0.047 | 0.055 |
| e | 0.950 BSC | 0.037 BSC | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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