Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | PMST3904,115 |
| Package | SOT-323 |
| Model Number | PMST3904,115 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | PMST3904,115 | Package | SOT-323 |
| Model Number | PMST3904,115 |
The Nexperia PMST3904 is an NPN switching transistor designed for general amplification and switching applications. This AEC-Q101 qualified component is housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. Its PNP complement is the PMST3906.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 40 | V |
| IC | Collector current | - | - | - | 200 | mA |
| hFE | DC current gain | VCE = 1 V; IC = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | 300 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| ICM | Peak collector current | - | - | - | 200 | mA |
| IBM | Peak base current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient in free air [1] | - | - | - | 625 | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 50 | nA |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A; Tamb = 25 C | - | - | 50 | nA |
| hFE | DC current gain | VCE = 1 V; IC = 0.1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 60 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 80 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | 300 | - |
| hFE | DC current gain | VCE = 1 V; IC = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 60 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 1 mA; Tamb = 25 C | - | - | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 5 mA; Tamb = 25 C | - | - | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 1 mA; Tamb = 25 C | 650 | - | 850 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 50 mA; IB = 5 mA; Tamb = 25 C | - | - | 950 | mV |
| Cc | Collector capacitance | VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 4 | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 8 | pF |
| fT | Transition frequency | VCE = 10 V; IC = 20 mA; f = 100 MHz; Tamb = 25 C | 300 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz; Tamb = 25 C | - | - | 5 | dB |
| td | Delay time | Switching times (between 10% and 90% levels) | - | - | 35 | ns |
| tr | Rise time | Switching times (between 10% and 90% levels) | - | - | 35 | ns |
| ts | Storage time | Switching times (between 10% and 90% levels) | - | - | 200 | ns |
| tf | Fall time | IC = 10 mA; IBon = 1 mA; IBoff = -1 mA; Tamb = 25 C | - | - | 50 | ns |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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