Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 2W |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223 |
| Mfr. Part # | PBSS4350Z,135 |
| Package | SOT-223 |
| Model Number | PBSS4350Z,135 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 2W | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223 | Mfr. Part # | PBSS4350Z,135 |
| Package | SOT-223 | Model Number | PBSS4350Z,135 |
The Nexperia PBSS4350Z is a 50 V low VCEsat NPN transistor designed for power management applications. It offers a low collector-emitter saturation voltage, high collector current capability, and high DC current gain at high collector currents, leading to increased efficiency and reduced heat generation. This transistor is AEC-Q101 qualified and is suitable for use in DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), peripheral drivers, and inductive load drivers.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IC | Collector current | - | - | - | 3 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 5 | A |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; Tamb = 25 C | 200 | - | - | - |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 200 mA; Tamb = 25 C | - | 110 | 145 | m |
| VCBO | Collector-base voltage | open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | 1 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | 1.35 | 2 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 92 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [2] | - | - | 62.5 | K/W |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; Tamb = 25 C [1] | 200 | - | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A; Tamb = 25 C [1] | 200 | - | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 2 A; Tamb = 25 C [1] | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] | - | - | 90 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C [1] | - | - | 170 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA; Tamb = 25 C [1] | - | - | 290 | mV |
| RCEsat | Collector-emitter saturation resistance | - | - | 110 | 145 | m |
| VBEsat | Base-emitter saturation voltage | IC = 2 A; IB = 200 mA; Tamb = 25 C [1] | - | - | 1.2 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 1 A; Tamb = 25 C [1] | - | - | 1.1 | V |
| fT | Transition frequency | VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 30 | pF |
[1] Pulse test: tp 300 s; 0.02
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!