| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 80MHz |
| type | PNP |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | BC807-40,215 |
| Package | SOT-23 |
| Model Number | BC807-40,215 |
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Product Specification
| Current - Collector Cutoff | 100nA | Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 80MHz | type | PNP |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | BC807-40,215 | Package | SOT-23 |
| Model Number | BC807-40,215 |
The Nexperia BC807 series comprises PNP general-purpose transistors in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. These transistors offer high current capability and come with three distinct current gain selections, making them suitable for general-purpose switching and amplification applications. They are designed to provide reliable performance in a wide range of electronic circuits.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base; Tamb = 25 C | - | - | -45 | V |
| IC | Collector current | Tamb = 25 C | - | - | -500 | mA |
| ICM | Peak collector current | Single pulse; tp 1 ms; Tamb = 25 C | - | - | -1 | A |
| hFE | DC current gain | BC807 [1] | 100 | - | 600 | - |
| BC807-16 [1] | 100 | - | 250 | - | ||
| BC807-25 [1] | 160 | - | 400 | - | ||
| BC807-40 [1] | 250 | - | 600 | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; Tamb = 25 C [1] | - | - | -700 | mV |
| VBE | Base-emitter voltage | VCE = -1 V; IC = -500 mA; Tamb = 25 C [1][2] | - | - | -1.2 | V |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C | 80 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 5 | - | pF |
| VCBO | Collector-base breakdown voltage | Open emitter; Tamb = 25 C | - | - | -50 | V |
| V(BR)CEO | Collector-emitter breakdown voltage | Open base; Tamb = 25 C | - | - | -45 | V |
| V(BR)EBO | Emitter-base breakdown voltage | Open collector; Tamb = 25 C | - | - | -5 | V |
| Ptot | Total power dissipation | Tamb 25 C [1][2] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
[1] Pulsed; tp 300 s; 0.02
[2] VBE decreases by about 2 mV/K with increasing temperature.
Pinning:
Ordering Information:
Marking Codes:
(% = placeholder for manufacturing site code)
Package Outline: SOT23 (TO-236AB)
Soldering Footprints: Reflow and Wave soldering options available for SOT23 (TO-236AB).
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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