Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT3904,215 |
| Package | SOT-23 |
| Model Number | PMBT3904,215 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 300MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | PMBT3904,215 | Package | SOT-23 |
| Model Number | PMBT3904,215 |
Product Overview
The Nexperia PMBT3904 is an NPN switching transistor designed for general switching and amplification applications. Encased in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. It is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the PMBT3906.
Product Attributes
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 40 | V |
| IC | Collector current | - | - | - | 200 | mA |
| hFE | DC current gain | VCE = 1 V; IC = 10 mA | 100 | - | 300 | [1] |
| VCBO | Collector-base voltage | open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| ICM | Peak collector current | - | - | - | 200 | mA |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | [1] | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A | - | - | 50 | nA |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A | - | - | 50 | nA |
| hFE | DC current gain | VCE = 1 V; IC = 0.1 mA [1] | 60 | - | - | V |
| hFE | DC current gain | VCE = 1 V; IC = 1 mA [1] | 80 | - | - | V |
| hFE | DC current gain | VCE = 1 V; IC = 10 mA [1] | 100 | - | 300 | [1] |
| hFE | DC current gain | VCE = 1 V; IC = 50 mA [1] | 60 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 100 mA [1] | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 1 mA | - | - | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 5 mA | - | - | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 1 mA | 650 | - | 850 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 50 mA; IB = 5 mA | - | - | 950 | mV |
| td | Delay time | - | - | - | 35 | ns |
| tr | Rise time | - | - | - | 35 | ns |
| ts | Storage time | - | - | - | 200 | ns |
| tf | Fall time | IC = 10 mA; IBon = 1 mA; IBoff = -1 mA | - | - | 50 | ns |
| Cc | Collector capacitance | VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 4 | pF |
| Ce | Emitter capacitance | VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz | - | - | 8 | pF |
| fT | Transition frequency | VCE = 20 V; IC = 10 mA; f = 100 MHz | 300 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz | - | - | 5 | dB |
[1] Pulsed test: tp 300 s; 0.02
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!