Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 480mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 480mW Surface Mount SOT-23 |
| Mfr. Part # | PBSS8110T,215 |
| Package | SOT-23 |
| Model Number | PBSS8110T,215 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 480mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 480mW Surface Mount SOT-23 | Mfr. Part # | PBSS8110T,215 |
| Package | SOT-23 | Model Number | PBSS8110T,215 |
The Nexperia PBSS8110T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, making it suitable for various demanding applications. Key application segments include automotive 42 V power systems, telecom infrastructure, industrial power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors. Its PNP complement is the PBSS9110T.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 100 | V |
| IC | Collector current | - | - | - | 1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 3 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 1 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 165 | 200 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 120 | V |
| VEBO | Emitter-base voltage | Collector open | - | - | 5 | V |
| IB | Base current | - | - | - | 300 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 480 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [2] | - | - | 260 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 120 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | Collector open; IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 80 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 80 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICES | Collector-emitter cut-off current | VCE = 80 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 10 V; IC = 1 mA; Tamb = 25 C | 150 | - | - | - |
| hFE | DC current gain | VCE = 10 V; IC = 250 mA; Tamb = 25 C | 150 | - | 500 | - |
| hFE | DC current gain | VCE = 10 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | - | - |
| hFE | DC current gain | VCE = 10 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 80 | - | - | - |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 100 mA; Tamb = 25 C | - | - | 1.05 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 10 V; IC = 1 A; Tamb = 25 C | - | - | 0.9 | V |
| fT | Transition frequency | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 7.5 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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