Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 100MHz |
| type | NPN+PNP |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 350mW Surface Mount DFN-6(1x1) |
| Mfr. Part # | BC847QAPNZ |
| Package | DFN-6(1x1) |
| Model Number | BC847QAPNZ |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 350mW | Transition frequency(fT) | 100MHz |
| type | NPN+PNP | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 350mW Surface Mount DFN-6(1x1) | Mfr. Part # | BC847QAPNZ |
| Package | DFN-6(1x1) | Model Number | BC847QAPNZ |
The Nexperia BC847QAPN is a general-purpose NPN/PNP transistor designed for switching and amplification applications, particularly in mobile devices. This AEC-Q101 qualified component is housed in an ultra-small, leadless DFN1010B-6 (SOT1216) plastic package, offering a low profile of 0.37 mm. Its design contributes to reduced component count and lower pick-and-place costs in manufacturing.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Quick Reference Data | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | - | 450 | - |
| Limiting Values | ||||||
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| IC | Collector current | - | - | - | 100 | mA |
| ICM | Peak collector current | - | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 230 | mW |
| Ptot | Total power dissipation | Per device; Tamb 25 C [1] | - | - | 350 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal Characteristics | ||||||
| Rth(j-a) | Thermal resistance junction to ambient | Per transistor; in free air [1] | - | - | 543 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | Per device; in free air [1] | - | - | 357 | K/W |
| Characteristics | ||||||
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 15 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | - | 450 | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 100 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | 760 | - | mV |
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 900 | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 600 | 660 | 725 | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 10 mA; Tamb = 25 C | - | 710 | 820 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 4 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 MHz; B = 200 Hz; Tamb = 25 C | - | - | 10 | dB |
| Ce | Emitter capacitance | TR1 (NPN); VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | 11 | - | pF |
| Ce | Emitter capacitance | TR2 (PNP); VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | 10 | - | pF |
| Package Outline | ||||||
| Package | DFN1010B-6 (SOT1216) | Dimensions | See Figure 16 | - | - | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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