Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-666-6 |
| Mfr. Part # | BC847BV,115 |
| Package | SOT-666-6 |
| Model Number | BC847BV,115 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-666-6 |
| Mfr. Part # | BC847BV,115 | Package | SOT-666-6 |
| Model Number | BC847BV,115 |
The Nexperia BC847BV is an NPN general-purpose double transistor designed for switching and amplification applications. Housed in an ultra-small SOT666 flat lead plastic package, this transistor offers a total power dissipation of 300 mW and features very low collector capacitance. Its straight leads ensure excellent coplanarity and improved thermal behavior, reducing the need for multiple components and saving board space. The BC847BV is the PNP complement to the BC857BV.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | - | 450 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| ICM | Peak collector current | - | - | - | 200 | mA |
| IBM | Peak base current | tp 1 ms | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Thermal characteristics | ||||||
| Per transistor | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | [1] [2] | - | - | 625 | K/W |
| Per device | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | [1] [2] | - | - | 416 | K/W |
| Characteristics | ||||||
| Per transistor | ||||||
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 15 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 200 | - | 450 | - |
| hFE | DC current gain | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 100 | - |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | 755 | - | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA; Tamb = 25 C | 580 | 655 | 700 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 1.5 | pF |
| Ce | Emitter capacitance | VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | 11 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Dimensions:
Package Outline SOT666: 1.6 mm x 1.2 mm x 0.55 mm
Applications:
General purpose switching and amplification.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!