Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 5uA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 250W |
| Transition frequency(fT) | 4MHz |
| type | NPN+PNP |
| Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN+PNP 300V 16A 4MHz 250W Through Hole TO-264 |
| Mfr. Part # | MJL21196 |
| Package | TO-264 |
| Model Number | MJL21196 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 5uA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 250W | Transition frequency(fT) | 4MHz |
| type | NPN+PNP | Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 300V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN+PNP 300V 16A 4MHz 250W Through Hole TO-264 | Mfr. Part # | MJL21196 |
| Package | TO-264 | Model Number | MJL21196 |
This is a silicon bipolar epitaxial planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics with fT > 20MHz. It is suitable for the output stage of high-fidelity audio amplifiers exceeding 100W. The device is designed for continuous load operation under high temperature, high voltage, and large current conditions, withstanding significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | ||||||
| Collector-Emitter Voltage | VCBO | 330 | V | |||
| Collector-Emitter Voltage | VCEO | 250 | V | |||
| Emitter-Base Voltage | VEBO | 5.0 | V | |||
| Collector Current | IC | 16.0 | A | |||
| Base Current | IB | 5.0 | A | |||
| Collector Power Dissipation (Tc=25) | PC | 250 | W | |||
| Junction Temperature | Tj | 10 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Electrical Characteristics (Tc=25) | ||||||
| Collector-Base Breakdown Leakage | ICBO | VCB=250V; IE=0 | 5.0 | uA | ||
| Emitter-Base Breakdown Leakage | IEBO | VEB=5V; Ic=0 | 5.0 | uA | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=50mA,IB=0 | 250 | 300 | V | |
| Amplification Gain | hFE | VCE=5V; IC=1A | 75 | 150 | ||
| Amplification Gain | hFE(2) | VCE=5V; IC=8A | 25 | 100 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=8A; IB=0.8A | 1.4 | V | ||
| Base-Emitter Saturation Voltage | VBE | VCE=5V;IC=8A | 2.2 | V | ||
| Characteristic Frequency | fT | VCE=5V; IC=1A | 4 | MHz | ||
| Typical Characteristics | ||||||
| Thermal Resistance (Junction to Case) | RJC | 0.35 | /W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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