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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China General purpose PNP transistor Nexperia BC807DS115 with low component count and
China General purpose PNP transistor Nexperia BC807DS115 with low component count and

  1. China General purpose PNP transistor Nexperia BC807DS115 with low component count and

General purpose PNP transistor Nexperia BC807DS115 with low component count and

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 600mW
Transition frequency(fT) 80MHz
type PNP
Number 2 PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 45V
Operating Temperature -65℃~+150℃
Description Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 600mW Surface Mount SC-74-6
Mfr. Part # BC807DS,115
Package SC-74-6
Model Number BC807DS,115

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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 600mW Transition frequency(fT) 80MHz
type PNP Number 2 PNP
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 45V
Operating Temperature -65℃~+150℃ Description Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 600mW Surface Mount SC-74-6
Mfr. Part # BC807DS,115 Package SC-74-6
Model Number BC807DS,115

Product Overview

The Nexperia BC807DS is a PNP/PNP general-purpose double transistor designed for switching and amplification applications. This AEC-Q101 qualified component offers reduced component count and lower pick-and-place costs, making it suitable for automotive applications. It is available in an SOT457 (SC-74) plastic package.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP/PNP general purpose double transistors
  • Complementary NPN/NPN: BC817DS
  • Complementary NPN/PNP: BC817DPN
  • Qualification: AEC-Q101 qualified
  • Package Type: SOT457 (SC-74)
  • Material: Plastic, surface-mounted package

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - -45 V
IC Collector current - - - -500 mA
ICM Peak collector current Single pulse; tp 1 ms - - 1 A
VCBO Collector-base voltage Open emitter - - -50 V
VEBO Emitter-base voltage Open collector - - -5 V
IBM Peak base current Single pulse; tp 1 ms - - -200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 600 mW
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 208 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A - - -100 nA
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
hFE DC current gain VCE = -1 V; IC = -100 mA [1] 160 - 400 -
hFE DC current gain VCE = -1 V; IC = -500 mA [1] 40 - - -
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA [1] - - -700 mV
VBE Base-emitter voltage VCE = -1 V; IC = -500 mA [1] [2] - - -1.2 V
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - 9 - pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz 80 - - MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm.

[2] VBE decreases by approximately -2 mV/k with increasing temperature.


2410122132_Nexperia-BC807DS-115_C191355.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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