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China High Current Capability PNP Medium Power Transistors Nexperia BCX51 115 Ideal
China High Current Capability PNP Medium Power Transistors Nexperia BCX51 115 Ideal

  1. China High Current Capability PNP Medium Power Transistors Nexperia BCX51 115 Ideal

High Current Capability PNP Medium Power Transistors Nexperia BCX51 115 Ideal

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 1.35W
Transition frequency(fT) 145MHz
type PNP
Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 45V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 45V 1A 145MHz 1.35W Surface Mount SOT-89
Mfr. Part # BCX51,115
Package SOT-89
Model Number BCX51,115

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 1.35W Transition frequency(fT) 145MHz
type PNP Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 45V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 45V 1A 145MHz 1.35W Surface Mount SOT-89 Mfr. Part # BCX51,115
Package SOT-89 Model Number BCX51,115

Product Overview

The Nexperia BCP51, BCX51, and BC51PA series are PNP medium power transistors designed for Surface-Mounted Device (SMD) plastic packages. These transistors offer high current capability, multiple current gain selections, and high power dissipation. They are suitable for applications such as linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers. Select models feature exposed heatsinks for enhanced thermal and electrical conductivity, and leadless packages for miniaturization.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Medium Power Transistors
  • Qualification: AEC-Q101 qualified

Technical Specifications

Model Package NPN Complement VCEO (Max) IC (Max) ICM (Max)
BCP51 SOT223 (SC-73) - -45 V -1 A -2 A
BCX51 SOT89 (SC-62, TO-243) BCX54 -45 V -1 A -2 A
BC51PA SOT1061 (HUSON3) BC54PA -45 V -1 A -2 A
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -45 V
IC Collector current - - - -1 A
ICM Peak collector current single pulse; tp ≤ 1 ms - - -2 A
hFE DC current gain VCE = -2 V; IC = -150 mA 63 - 250 -
hFE DC current gain VCE = -2 V; IC = -150 mA 63 - 160 -
hFE DC current gain VCE = -2 V; IC = -150 mA 100 - 250 -
VCBO Collector-base voltage open emitter - - -45 V
VCEO Collector-emitter voltage open base - - -45 V
VEBO Emitter-base voltage open collector - - -5 V
IC Collector current - - - -1 A
ICM Peak collector current single pulse; tp ≤ 1 ms - - -2 A
IB Base current - - - -0.3 A
IBM Peak base current single pulse; tp ≤ 1 ms - - -0.3 A
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.65 W (BCP51, [1])
Ptot Total power dissipation Tamb ≤ 25 °C - - 1.00 W (BCP51, [2])
Ptot Total power dissipation Tamb ≤ 25 °C - - 1.35 W (BCP51, [3])
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.50 W (BCX51, [1])
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.95 W (BCX51, [2])
Ptot Total power dissipation Tamb ≤ 25 °C - - 1.35 W (BCX51, [3])
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.42 W (BC51PA, [1])
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.83 W (BC51PA, [2])
Ptot Total power dissipation Tamb ≤ 25 °C - - 1.10 W (BC51PA, [3])
Ptot Total power dissipation Tamb ≤ 25 °C - - 0.81 W (BC51PA, [4])
Ptot Total power dissipation Tamb ≤ 25 °C - - 1.65 W (BC51PA, [5])
Tj Junction temperature - - - 150 °C
Tamb Ambient temperature - -55 - +150 °C
Tstg Storage temperature - -65 - +150 °C
Rth(j-a) Thermal resistance junction to ambient BCP51 [1] - - 192 K/W
Rth(j-a) Thermal resistance junction to ambient BCP51 [2] - - 125 K/W
Rth(j-a) Thermal resistance junction to ambient BCP51 [3] - - 93 K/W
Rth(j-a) Thermal resistance junction to ambient BCX51 [1] - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient BCX51 [2] - - 132 K/W
Rth(j-a) Thermal resistance junction to ambient BCX51 [3] - - 93 K/W
Rth(j-a) Thermal resistance junction to ambient BC51PA [1] - - 298 K/W
Rth(j-a) Thermal resistance junction to ambient BC51PA [2] - - 151 K/W
Rth(j-a) Thermal resistance junction to ambient BC51PA [3] - - 114 K/W
Rth(j-a) Thermal resistance junction to ambient BC51PA [4] - - 154 K/W
Rth(j-a) Thermal resistance junction to ambient BC51PA [5] - - 76 K/W
Rth(j-sp) Thermal resistance junction to solder point BCP51 - - 16 K/W
Rth(j-sp) Thermal resistance junction to solder point BCX51 - - 16 K/W
Rth(j-sp) Thermal resistance junction to solder point BC51PA - - 20 K/W
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A - - -100 nA
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -10 µA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
hFE DC current gain VCE = -2 V; IC = -5 mA 63 - - -
hFE DC current gain VCE = -2 V; IC = -150 mA 63 - 250 -
hFE DC current gain VCE = -2 V; IC = -500 mA [1] 40 - - -
hFE DC current gain VCE = -2 V; hFE selection -10; IC = -150 mA 63 - 160 -
hFE DC current gain VCE = -2 V; hFE selection -16; IC = -150 mA 100 - 250 -
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA [1] - - -0.5 V
VBE Base-emitter voltage VCE = -2 V; IC = -500 mA [1] - - -1 V
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 15 - pF
fT Transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz - 145 - MHz

2410121732_Nexperia-BCX51-115_C130421.pdf

Company Details

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  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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