Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 50W |
| Transition frequency(fT) | 40MHz |
| type | PNP |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 230V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 230V 1A 40MHz 50W Through Hole TO-220F |
| Mfr. Part # | 2SA1837 |
| Package | TO-220F |
| Model Number | 2SA1837 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 50W | Transition frequency(fT) | 40MHz |
| type | PNP | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 230V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 230V 1A 40MHz 50W Through Hole TO-220F | Mfr. Part # | 2SA1837 |
| Package | TO-220F | Model Number | 2SA1837 |
The Minos Silicon PNP Epitaxial Type Power Amplifier is designed for high-performance amplification applications. It offers a complementary pairing with the 2SC4793 and boasts a high collector voltage of -230V (min). This component is suitable for various power amplifier circuits where reliability and robust voltage handling are critical. Continuous operation under heavy loads, including high temperature, current, or voltage, may significantly reduce product reliability, even if operating conditions remain within Absolute Maximum Ratings.
| Symbol | Parameter | Rating | Unit | Test Condition | Min | Typ | Max | |
|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||||
| VCBO | Collector-base voltage | -230 | V | |||||
| VCEO | Collector-emitter voltage | -230 | V | |||||
| VEBO | Emitter-base voltage | -5 | V | |||||
| IC | Collector current | -1 | A | |||||
| IB | Base current | -0.2 | A | |||||
| PC | Collector power dissipation (Tc=25) | 50 | W | |||||
| Tj | Junction temperature | 150 | ||||||
| TSTG | Storage temperature range | -55~150 | ||||||
| Thermal Characteristics | ||||||||
| RJC | Junction-to-Case | /W | 3.0 | |||||
| Electrical Characteristics | ||||||||
| ICBO | Collector-Base Cut-off Current | uA | VCB=-230V,IE=0 | -1.0 | ||||
| IEBO | Emitter-Base Cut-off Current | uA | VEB=-5V,IC=0 | -1.0 | ||||
| VCEO | Collector-Emitter Breakdown Voltage | -230 | V | IC=-1mA | ||||
| hFE | DC current gain | IC=-0.1A; VCE=-5V | 100 | 300 | ||||
| VCEsat | Collector-emitter saturation voltage | V | IC=-0.5A; IB=-0.05A | -0.5 | ||||
| VBEsat | Base-Emitter Saturation Voltage | V | IC=-0.5A,IB=-0.05A | -1.4 | ||||
| VBE | Base-emitter voltage | V | VCE=-5V;IC=-0.5A | -1.5 | ||||
| fT | Transition frequency | MHz | VCE=-10V;IC=-100mA | 40 | ||||
| Symbol | Dimensionsmillimeters | Min | Max |
|---|---|---|---|
| A | 4.35 | 4.75 | |
| A1 | 2.30 | 2.70 | |
| A2 | 0.40 | 0.80 | |
| A3 | 2.10 | 2.50 | |
| b | 0.60 | 1.00 | |
| b1 | 1.00 | 1.40 | |
| c | 0.30 | 0.70 | |
| e | 2.30 | 2.70 | |
| E | 9.80 | 10.2 | |
| E1 | 6.30 | 6.70 | |
| H | 15.6 | 16.0 | |
| H1 | 8.80 | 9.20 | |
| H2 | 12.9 | 13.5 | |
| H3 | 3.10 | 3.50 | |
| G | 3.10 | 3.50 | |
| P | 3.10 | 3.50 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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