Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 10uA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 200W |
| Transition frequency(fT) | 4MHz |
| type | PNP |
| Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 250V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-264 |
| Mfr. Part # | MJL21193 |
| Package | TO-264 |
| Model Number | MJL21193 |
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Product Specification
| Current - Collector Cutoff | 10uA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 200W | Transition frequency(fT) | 4MHz |
| type | PNP | Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 250V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-264 | Mfr. Part # | MJL21193 |
| Package | TO-264 | Model Number | MJL21193 |
The Minos Silicon MJL21193 is a PNP epitaxial power transistor designed for high-fidelity audio frequency amplifier output stages. It offers a high collector voltage of -250V (min) and is complementary to the MJL21194. This device is recommended for 100-W audio amplifier applications. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly decrease product reliability, even if operating conditions remain within absolute maximum ratings.
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-base voltage | VCBO | -400 | V | ||||
| Collector-emitter voltage | VCEO | -250 | V | ||||
| Emitter-base voltage | VEBO | -5 | V | ||||
| Collector current | IC | -16 | A | ||||
| Base current | IB | -5 | A | ||||
| Collector power dissipation (Tc=25) | PC | 200 | W | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector cut-off current | ICBO | uA | VCB=-250V; IE=0 | -10.0 | |||
| Emitter cut-off current | IEBO | uA | VEB=-5V; Ic=0 | -10.0 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | -250 | V | IC=-50mA;IB=0 | |||
| DC current gain | hFE | VCE=-5V; IC=-8A; | 20 | 80 | |||
| DC current gain | hFE(2) | VCE=-5V; IC=-16A; | 8 | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-8A; IB=-0.8A | -1.4 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-16A; IB=-3.2A | -4 | |||
| Base-emitter voltage | VBE | V | VCE=-5V;IC=-8A | -2.2 | |||
| Transition frequency | fT | MHz | VCE=-10V; IC=-1A | 4 | |||
| Junction-to-Case Thermal Resistance | RJC | /W | 0.63 | ||||
Note: Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Please do not exceed absolute maximum ratings during circuit design. When installing a heat sink, pay attention to torsional moment and smoothness. MOSFETs are sensitive to static electricity; protect them from damage during use.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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