Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 5uA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 250W |
| Transition frequency(fT) | 4MHz |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 16A |
| Collector - Emitter Voltage VCEO | 250V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN+PNP 250V 16A 4MHz 250W Through Hole TO-264 |
| Mfr. Part # | MJL21195 |
| Package | TO-264 |
| Model Number | MJL21195 |
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Product Specification
| Current - Collector Cutoff | 5uA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 250W | Transition frequency(fT) | 4MHz |
| type | NPN+PNP | Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 16A | Collector - Emitter Voltage VCEO | 250V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN+PNP 250V 16A 4MHz 250W Through Hole TO-264 |
| Mfr. Part # | MJL21195 | Package | TO-264 |
| Model Number | MJL21195 |
This is a silicon bipolar epitaxial planar NPN-PNP matched power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics (fT>20MHz), making it suitable for output stages of high-fidelity audio amplifiers exceeding 100W. It is designed for continuous load operation under high temperature, high voltage, and large current conditions, withstanding significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typical | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-Emitter Voltage | VCBO | 330 | V | ||||
| Collector-Emitter Voltage | VCEO | 250 | V | ||||
| Emitter-Base Voltage | VEBO | 5.0 | V | ||||
| Collector Current | IC | 16.0 | A | ||||
| Base Current | IB | 5.0 | A | ||||
| Collector Power Dissipation | PC | 250 | W | (Tc=25) | |||
| Junction Temperature | Tj | 10 | |||||
| Storage Temperature Range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector-Base Breakdown Leakage | ICBO | uA | VCB=250V; IE=0 | 5.0 | |||
| Emitter-Base Breakdown Leakage | IEBO | uA | VEB=5V; Ic=0 | 5.0 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 250 | V | IC=50mA,IB=0 | 300 | ||
| Gain | hFE | VCE=5V; IC=1A | 75 | 150 | |||
| Gain | hFE(2) | VCE=5V; IC=8A | 25 | 100 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=8A; IB=0.8A | 1.4 | |||
| Base-Emitter Saturation Voltage | VBE | V | VCE=5V;IC=8A | 2.2 | |||
| Characteristic Frequency | fT | 4 | MHz | VCE=5V; IC=1A | |||
| Typical Characteristics | |||||||
| Thermal Resistance (Junction to Case) | RJC | /W | 0.35 | ||||
Notes:
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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