Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1mA |
| Pd - Power Dissipation | 65W |
| Transition frequency(fT) | 3MHz |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 65W Through Hole TO-220 |
| Mfr. Part # | TIP41C |
| Package | TO-220 |
| Model Number | TIP41C |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1mA |
| Pd - Power Dissipation | 65W | Transition frequency(fT) | 3MHz |
| type | NPN | Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 65W Through Hole TO-220 | Mfr. Part # | TIP41C |
| Package | TO-220 | Model Number | TIP41C |
This NPN silicon transistor is designed for audio power amplification. It offers reliable performance with key electrical parameters and is housed in a TO-220 package, suitable for various audio applications.
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (TC=25) | PC | 65 | W | ||||
| Collector Power Dissipation (TA =25) | PC | 2 | W | ||||
| Collector-Base Voltage | VCBO | 100 | V | ||||
| Collector-Emitter Voltage | VCEO | 100 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 6 | A | ||||
| Base Current | IB | 2 | A | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Collector-Emitter Cutoff Current | ICEO | 0.7 | mA | VCE=60V, IB=0 | |||
| Collector-Base Cutoff Current | IEBO | 1 | mA | VEB=5V, IC=0 | |||
| Collector-Emitter Saturation Current | ICES | 400 | A | VCE=100V, VEB=0 | |||
| DC Current Gain | HFE(1) | 30 | VCE=4V, IC=0.3A | ||||
| DC Current Gain | HFE(2) | 15 | 80 | VCE=4V, IC=3A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC=6A, IB=600mA | |||
| Base-Emitter On Voltage | VBE(on) | 2.0 | V | VCE=4V, IC=6A | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC=30mA, IB=0 | |||
| Characteristic Frequency | fT | 3.0 | MHz | VCE=10V, IC=500mA, f=1MHz | |||
| Pinout (TO-220) | |||||||
| Pin 1 | Base (B) | ||||||
| Pin 2 | Collector (C) | ||||||
| Pin 3 | Emitter (E) | ||||||
Notes:
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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