| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.35W |
| Transition frequency(fT) | 180MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 1A 180MHz 1.35W Surface Mount SOT-223 |
| Mfr. Part # | BCP56-16,115 |
| Package | SOT-223 |
| Model Number | BCP56-16,115 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.35W | Transition frequency(fT) | 180MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 1A 180MHz 1.35W Surface Mount SOT-223 | Mfr. Part # | BCP56-16,115 |
| Package | SOT-223 | Model Number | BCP56-16,115 |
Product Overview
The Nexperia BCP56 series offers NPN medium power transistors in a compact SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors are designed for high collector current capability, offering multiple current gain selections and a high power dissipation capability. They are ideal for applications such as linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.
Features and Benefits
Applications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 80 | V |
| IC | Collector current | - | - | - | 1 | A |
| ICM | Peak collector current | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
| hFE | DC current gain | BCP56 VCE = 2 V; IC = 150 mA [1] | 63 | - | 250 | - |
| BCP56-10 VCE = 2 V; IC = 150 mA [1] | 63 | - | 160 | - | ||
| BCP56-16 VCE = 2 V; IC = 150 mA [1] | 100 | - | 250 | - | ||
| VCBO | Collector-base voltage | Open emitter | - | - | 100 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IB | Base current | - | - | - | 0.3 | A |
| IBM | Peak base current | Single pulse; tp ≤ 1 ms | - | - | 0.3 | A |
| Ptot | Total power dissipation | Tamb ≤ 25 °C [1] | - | - | 0.65 | W |
| Tamb ≤ 25 °C [2] | - | - | 1.00 | W | ||
| Tamb ≤ 25 °C [3] | - | - | 1.35 | W | ||
| Tj | Junction temperature | - | - | - | 150 | °C |
| Tamb | Ambient temperature | - | -55 | - | 150 | °C |
| Tstg | Storage temperature | - | -65 | - | 150 | °C |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 µA; IE = 0 A | 100 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A | 80 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100 µA; IC = 0 A | 5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 100 | nA |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA [1] | - | - | 500 | mV |
| VBE | Base-emitter voltage | VCE = 2 V; IC = 500 mA [1] | - | - | 1 | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | 6 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 50 mA; f = 100 MHz | 100 | 180 | - | MHz |
[1] Pulsed; tp ≤ 300 µs; δ ≤ 0.02
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm².
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm².
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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