| Current - Collector Cutoff | 5uA |
| Pd - Power Dissipation | 100W |
| Transition frequency(fT) | 30MHz |
| type | NPN |
| Current - Collector(Ic) | 10A |
| Collector - Emitter Voltage VCEO | 140V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3PS |
| Mfr. Part # | 2SC5198 |
| Package | TO-3PS |
| Model Number | 2SC5198 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 5uA | Pd - Power Dissipation | 100W |
| Transition frequency(fT) | 30MHz | type | NPN |
| Current - Collector(Ic) | 10A | Collector - Emitter Voltage VCEO | 140V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 140V 10A 30MHz 100W Through Hole TO-3PS |
| Mfr. Part # | 2SC5198 | Package | TO-3PS |
| Model Number | 2SC5198 |
The Minos 2SC5198 is a Silicon NPN Triple Diffused Type transistor designed for power amplifier applications. It is complementary to the 2SA1941 and features a high collector voltage of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product reliability even if operating conditions remain within absolute maximum ratings.
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-base voltage | VCBO | 140 | V | ||||
| Collector-emitter voltage | VCEO | 140 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current | IC | 10 | A | ||||
| Base current | IB | 1 | A | ||||
| Collector power dissipation (Tc=25) | PC | 100 | W | ||||
| Junction temperature | Tj | 150 | |||||
| Storage temperature range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector cut-off current | ICBO | uA | VCB=140V; IE=0 | 5 | |||
| Emitter cut-off current | IEBO | uA | VEB=5V; Ic=0 | 5 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 140 | V | IC=50mA,IB=0 | |||
| DC current gain | hFE | VCE=5V; IC=1A | 55 | 160 | |||
| VCE=5V; IC=5A | 35 | 83 | |||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=8A; IB=0.8A | 3.0 | |||
| Base-emitter voltage | VBE | V | VCE=5V;IC=5A | 1.5 | |||
| Transition frequency | fT | MHz | VCE=5V; IC=1A | 30 | |||
| Typical Characteristics | |||||||
| Junction-to-Case thermal resistance | RJC | /W | 0.35 | ||||
| Package Information | |||||||
| Package Type | TO-3PS | ||||||
| Dimensions (TO-3PS PACKAGE) | |||||||
| Symbol | Unit | Min | Nom | Max | |||
| A | mm | 4.30 | 4.50 | 4.70 | |||
| A1 | mm | 1.3 | 1.5 | 1.7 | |||
| A2 | mm | 2.50 | 2.70 | 2.90 | |||
| b | mm | 0.80 | 1.0 | 1.20 | |||
| b1 | mm | 1.80 | 2.00 | 2.20 | |||
| c | mm | 0.50 | 0.60 | 0.70 | |||
| e | mm | 5.25 | 5.45 | 5.65 | |||
| E | mm | 15.1 | 15.5 | 15.9 | |||
| E1 | mm | 13.1 | 13.3 | 13.5 | |||
| E2 | mm | 13.2 | 13.4 | 13.6 | |||
| E3 | mm | 9.1 | 9.3 | 9.5 | |||
| H | mm | 19.8 | 20.0 | 20.2 | |||
| H1 | mm | 20.0 | 20.5 | 21.0 | |||
| H2 | mm | 18.3 | 18.5 | 18.7 | |||
| H3 | mm | 2.8 | 3.0 | 3.2 | |||
| G | mm | 4.30 | 4.50 | 4.70 | |||
| P | mm | 3.00 | 3.20 | 3.40 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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