Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 290mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 290mW Surface Mount SOT-323 |
| Mfr. Part # | BC817W,115 |
| Package | SOT-323 |
| Model Number | BC817W,115 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 290mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 290mW Surface Mount SOT-323 |
| Mfr. Part # | BC817W,115 | Package | SOT-323 |
| Model Number | BC817W,115 |
The Nexperia BC817W series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering high current capability and multiple current gain selections. They are ideal for general-purpose electronic circuits requiring reliable performance in a compact form factor.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base; Tamb = 25 C | - | - | 45 | V |
| IC | Collector current | Tamb = 25 C | - | - | 500 | mA |
| ICM | Peak collector current | Single pulse; tp 1 ms; Tamb = 25 C | - | - | 1 | A |
| hFE | DC current gain | BC817W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 100 | - | 600 | - |
| BC817-16W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 100 | - | 250 | - | ||
| BC817-25W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 160 | - | 400 | - | ||
| BC817-40W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 250 | - | 600 | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] | - | - | 700 | mV |
| VBE | Base-emitter voltage | VCE = 1 V; IC = 500 mA; Tamb = 25 C [1] [2] | - | - | 1.2 | V |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| VCBO | Collector-base voltage | Open emitter; Tamb = 25 C | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector; Tamb = 25 C | - | - | 5 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] [3] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
[1] Pulsed; tp 300 s; 0.02
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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