Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 420MHz |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 15V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN+PNP 15V 500mA 420MHz 300mW TSSOP-6(SOT-363) |
| Mfr. Part # | PBSS2515YPN,115 |
| Package | TSSOP-6(SOT-363) |
| Model Number | PBSS2515YPN,115 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 420MHz |
| type | NPN+PNP | Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 15V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN+PNP 15V 500mA 420MHz 300mW TSSOP-6(SOT-363) |
| Mfr. Part # | PBSS2515YPN,115 | Package | TSSOP-6(SOT-363) |
| Model Number | PBSS2515YPN,115 |
The PBSS2515YPN is a low VCEsat NPN/PNP transistor pair designed for general-purpose switching and driver circuits. This device offers high current capability and a low collector-emitter saturation voltage, providing significant advantages in terms of reduced PCB area and lower pick-and-place costs by replacing two discrete SC-70 packaged transistors. Its compact SOT363 (SC-88) SMD plastic package makes it ideal for battery-driven equipment and other space-constrained applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor unless otherwise specified; for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 15 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 1 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | 500 | m |
| IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | 500 | m | ||
| VCBO | Collector-base voltage | Open emitter | - | - | 15 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| IC | Collector current | - | - | - | 500 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 200 | mW |
| Tamb 25 C [1] | - | - | 300 | mW | ||
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 416 | K/W |
| Characteristics (TR1 - NPN) | ||||||
| hFE | DC current gain | VCE = 2 V; IC = 10 mA; Tamb = 25 C | 200 | - | - | - |
| - | - | VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 150 | - | - | - |
| - | - | VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 90 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 25 | mV |
| - | - | IC = 200 mA; IB = 10 mA; Tamb = 25 C | - | - | 150 | mV |
| - | - | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 250 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 0.9 | V |
| fT | Transition frequency | VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | 250 | 420 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 4.4 | 6 | pF |
| Characteristics (TR2 - PNP) | ||||||
| hFE | DC current gain | VCE = -2 V; IC = -10 mA; Tamb = 25 C | -200 | - | - | - |
| - | - | VCE = -2 V; IC = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | -150 | - | - | - |
| - | - | VCE = -2 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | -90 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA; Tamb = 25 C | - | - | -25 | mV |
| - | - | IC = -200 mA; IB = -10 mA; Tamb = 25 C | - | - | -150 | mV |
| - | - | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -250 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -2 V; IC = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -0.9 | V |
| fT | Transition frequency | VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C | 100 | 280 | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 10 | pF |
| Type number | Package Name | Description |
|---|---|---|
| PBSS2515YPN | TSSOP6 | Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body |
| Type number | Marking code |
|---|---|
| PBSS2515YPN | N8% |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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