Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 1.6W |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 3A 100MHz Surface Mount SOT-89 |
| Mfr. Part # | PBSS5350X,135 |
| Package | SOT-89 |
| Model Number | PBSS5350X,135 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 1.6W | Transition frequency(fT) | 100MHz |
| type | PNP | Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 3A 100MHz Surface Mount SOT-89 | Mfr. Part # | PBSS5350X,135 |
| Package | SOT-89 | Model Number | PBSS5350X,135 |
The Nexperia PBSS5350X is a 50 V, 3 A PNP low VCEsat transistor designed for power management applications. It offers high collector current capability, enhanced efficiency leading to reduced heat generation, and smaller printed-circuit board requirements. This AEC-Q101 qualified transistor is suitable for various applications including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers like relays, buzzers, and motors.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -50 | V |
| IC | Collector current | - | - | - | -3 | A |
| ICM | Peak collector current | Limited by Tj(max) | - | - | -5 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 90 | 135 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | Collector open | - | - | -5 | V |
| IB | Base current | - | - | - | -0.5 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 1.6 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | Various PCB configurations | - | - | 225 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | - | - | - | 16 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A; Tamb = 25 C | -50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -10 mA; IB = 0 A; Tamb = 25 C | -50 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | Collector open; IE = -100 A; IC = 0 A; Tamb = 25 C | -5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICES | Collector-emitter cut-off current | VCB = -50 V; IE = 0 A; Tj = 150 C | - | - | -50 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 130 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -270 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -2 A; IB = -100 mA; Tamb = 25 C | - | - | -1.1 | V |
| fT | Transition frequency | VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 35 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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