| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 380mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 380mW Surface Mount SC-74 |
| Mfr. Part # | BC847DS,115 |
| Package | SC-74 |
| Model Number | BC847DS,115 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 380mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 380mW Surface Mount SC-74 |
| Mfr. Part # | BC847DS,115 | Package | SC-74 |
| Model Number | BC847DS,115 |
The Nexperia BC847DS is a general-purpose NPN/NPN transistor pair housed in a compact SOT457 (SC-74) SMD plastic package. Designed for switching and amplification applications, this transistor pair offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain, coupled with the absence of mutual interference between transistors, allows for component count reduction and board space savings. The BC847DS is AEC-Q101 qualified, making it suitable for demanding applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA | 200 | 300 | 450 | |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient in free air | [1] | - | - | 500 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | - | - | - | 250 | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A | - | - | 15 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 10 A | - | 280 | - | |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA | 200 | 300 | 450 | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | 55 | 100 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA | - | 200 | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | 755 | 850 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA | - | 1000 | - | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA | 580 | 650 | 700 | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 10 mA | - | - | 770 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; f = 1 MHz | - | 1.9 | - | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; f = 1 MHz | - | 11 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | 100 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz | - | 1.9 | - | dB |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz | - | 3.1 | - | dB |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 380 | mW |
| Rth(j-a) | Thermal resistance junction to ambient in free air | [1] | - | - | 328 | K/W |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!